Related papers: Engineering electron and hole tunneling with asymm…
We propose a two-qubit optically controlled phase gate in quantum dot molecules via adiabatic passage and hole tunneling. Our proposal combines the merits of the current generation of vertically stacked self-assembled InAs quantum dots and…
Tailoring electronic and optical properties of self-assembled InAs quantum dots (QDs) is a critical limit for the design of several QD-based optoelectronic devices operating in the telecom frequency range. We describe how a fine control of…
We present a feasible scheme for performing an optically controlled phase gate between two conduction electron spin qubits in adjacent self assembled quantum dots. Interaction between the dots is mediated by the tunneling of the valence…
We study optically single self-assembled quantum dots embedded within the wide quantum well of a mixed type quantum structure. We compare the steady state and pulsed photoluminescence spectra of these dots to those of previously studied…
Quantum antidot, a small potential hill introduced into a two-dimensional electron system, presents an attractive tool to study quantum mechanics of interacting electrons.Here, we report experiments on electron resonant tunneling via a…
Atomistic pseudopotential plus configuration interaction calculations of the energy needed to charge dots by either electrons or holes are described, and contrasted with the widely used, but highly simplified two-dimensional parabolic…
Using time-resolved transconductance spectroscopy, we study the tunneling dynamics between a two-dimensional electron gas (2DEG) and self-assembled quantum dots (QDs), embedded in a field-effect transistor structure. We find that the…
In a system with strong local repulsive interactions it should be more difficult to add an electron than to extract one. We make this idea precise by deriving various exact sum rules for the one-particle spectral function independent of the…
Two-dimensional electron and hole gases separated by a few nm from each other are produced in p-i-n diodes based upon MBE-grown GaAs/AlGaAs heterostructures. At such interlayer distances, the exciton formation and possibly Bose-Einstein…
We propose and demonstrate experimentally a novel design of single-electron quantum dots. The structure consists of a narrow band gap quantum well that can undergo a transition from the hole accumulation regime to the electron inversion…
We investigate the optical response of quantum dot molecules coherently driven by polarized laser light. Our description includes the splitting in excitonic levels caused by isotropic and anisotropic exchange interactions. We consider…
Single self-assembled InAs/GaAs quantum dots are a promising solid-state quantum technology, with which vacuum Rabi splitting, single-photon-level nonlinearities, and bright, pure, and indistinguishable single-photon generation having been…
InGaAs Quantum Dots embedded in GaAs barriers, grown in inverted tetrahedral recesses of 7 {\mu}m edge, have showed interesting characteristics in terms of uniformity and spectral narrowness of the emission. In this paper we present a study…
By combining band gap engineering with the self-organized growth of quantum dots, we present a scheme of adjusting the mid-infrared absorption properties to desired energy transitions in quantum dot based photodetectors. Embedding the self…
We create laterally large and low disorder quantum well based quantum dots to study single electron additions to two dimensional electron systems (2DES). Electrons tunnel into these dots across an AlGaAs tunnel barrier from a single $n+$…
Optical and electronic phenomena in solids arise from the behaviour of electrons and holes (unoccupied states in a filled electron sea). Electron-hole symmetry can often be invoked as a simplifying description, which states that electrons…
We report on capacitance-voltage spectroscopy of self-assembled InAs quantum dots under constant illumination. Besides the electronic and excitonic charging peaks in the spectrum reported earlier, we find additional resonances associated…
This paper reviews recent studies of mesoscopic fluctuations in transport through ballistic quantum dots, emphasizing differences between conduction through open dots and tunneling through nearly isolated dots. Both the open dots and the…
We present an inverted GaAs 2D electron gas with self-assembled InAs quantum dots in close proximity, with the goal of combining quantum transport with quantum optics experiments. We have grown and characterized several wafers -- using…
We investigate theoretically the spin purity of single holes confined in vertically coupled GaAs/AlGaAs quantum dots (QDs) under longitudinal magnetic fields. A unique behavior is observed for triangular QDs, by which the spin is largely…