Related papers: Self - Organized Si Dots On Ge Substrates
The incubation time preceding nucleation and growth of surface nanostructures is interesting from a fundamental viewpoint but also of practical relevance as it determines statistical properties of nanostructure ensembles such as size…
X-ray diffuse scattering in the vicinity of a basis-forbidden (200) Bragg reflection was measured for a sample with uncapped self-assembled Ge islands epitaxially grown on Si(001). Our results provide evidence of atomically ordered SiGe…
Normal incidence ion irradiation at elevated temperatures, when amorphization is prevented, induces novel nanoscale patterns of crystalline structures on elemental semiconductors by a reverse epitaxial growth mechanism: on Ge surfaces…
We report a detailed investigation of the first stages of the growth of self-organized Fe clusters on the reconstructed Au(111) surface by grazing incidence X-ray diffraction. Below one monolayer coverage, the Fe clusters are in "local…
Germanium nanostructures offer significant potential in developing advanced integrated circuit and disruptive quantum technologies, yet achieving both scalability and high carrier mobility remains a challenge in materials science. Here, we…
To develop silicon-based spintronic devices, we have explored high-quality ferromagnetic Fe$_{3}$Si/silicon (Si) structures. Using low-temperature molecular beam epitaxy at 130 $^circ$C, we realize epitaxial growth of ferromagnetic…
Clean Si(111)-(7{x7) surfaces, followed by air-exposure, have been investigated by reflection high energy electron diffraction (RHEED) and scanning tunneling microscopy (STM). Fourier transforms (FTs) of STM images show the presence of…
Cubic silicon carbide (3C-SiC) is an emerging material for high power and new generation devices, but the development of high quality 3C-SiC layer still represents a scientific and technological challenge especially when grown on a Si…
Ordered atomic-scale superlattices on surface hold great interest both for basic science and for potential applications in advanced technology. However, controlled fabrication of superlattices down to atomic scale has proven exceptionally…
GaAs nanowires and GaAs/Fe3Si core/shell nanowire structures were grown by molecular-beam epitaxy on oxidized Si(111) substrates and characterized by transmission electron microscopy. The surfaces of the original GaAs NWs are completely…
We compare the temperature dependence of optical and electrical characteristics of commercially available GaN light-emitting diodes (LEDs) grown on silicon and sapphire substrates. Contrary to conventional expectations, LEDs grown on…
A perfectly compliant substrate would allow the monolithic integration of high-quality semiconductor materials such as Ge and III-V on Silicon (Si) substrate, enabling novel functionalities on the well-established low-cost Si technology…
Ge/SiGe multi-quantum well heterostructures are highly sought-after for silicon-integrated optoelectronic devices operating in the broad range of the electromagnetic spectrum covering infrared to terahertz wavelengths. However, the…
A low-cost method to reduce the threading disloca-tions density (TDD) in relaxed germanium (Ge) epilayers grown on silicon (Si) substrates is presented. Ge/Si sub-strate was treated with post epitaxial process to create a region with a high…
In this work we report on a self-assembled growth of a Ge quantum dot lattice in a single 600-nm-thick Ge+Al2O3 layer during magnetron sputtering deposition of a Ge+Al2O3 mixture at an elevated substrate temperature. The self-assembly…
Growth of epitaxial gold silicide islands on bromine-passivated Si(111) substrates has been studied by optical and electron microscopy, electron probe micro analysis and helium ion backscattering. The islands grow in the shape of…
The homoepitaxial growth of Si on Si(100) covered by a resist mask is a necessary technological step for the fabrication of donor-based quantum devices with scanning tunneling microscope lithography. In the present work, the chlorine…
One year after the publication of the seminal paper on monolayer 3 by 3 reconstructed silicene grown on a silver (111) substrate, evidence of the synthesis of epitaxial root3 by root3 reconstructed multilayer silicene hosting Dirac fermions…
Issues of morphology, nucleation and growth of Ge cluster arrays deposited by ultrahigh vacuum molecular beam epitaxy on the Si(001) surface are considered. Difference in nucleation of quantum dots during Ge deposition at low (<600 deg C)…
For electrical spin injection and detection of spin-polarized electrons in silicon, we explore highly epitaxial growth of ferromagnetic full-Heusler-alloy Co2FeSi thin films on silicon substrates using low-temperature molecular beam epitaxy…