Low cost Ge/Si virtual substrate through dislocation trapping by nanovoids

Youcef A. Bioud; Abderraouf Boucherif; Etienne Paradis; Ali Soltani; Dominique Drouin; Richard Arès

Low cost Ge/Si virtual substrate through dislocation trapping by nanovoids

Materials Science 2018-05-16 v1

Authors: Youcef A. Bioud , Abderraouf Boucherif , Etienne Paradis , Ali Soltani , Dominique Drouin , Richard Arès

Abstract

A low-cost method to reduce the threading disloca-tions density (TDD) in relaxed germanium (Ge) epilayers grown on silicon (Si) substrates is presented. Ge/Si sub-strate was treated with post epitaxial process to create a region with a high density of nanovoids in Ge layer which act as a barrier for threading dislocations propagation .

Cite

@article{arxiv.1805.05621,
  title  = {Low cost Ge/Si virtual substrate through dislocation trapping by nanovoids},
  author = {Youcef A. Bioud and Abderraouf Boucherif and Etienne Paradis and Ali Soltani and Dominique Drouin and Richard Arès},
  journal= {arXiv preprint arXiv:1805.05621},
  year   = {2018}
}

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