Related papers: Electrically tunable g-factors in quantum dot mole…
The paper reports optical orientation experiments performed in the narrow GaAs/AlGaAs quantum wells doped with Mn. We experimentally demonstrate a control over the spin polarization by means of the optical orientation via the…
In a molecule formed by two atoms, energy difference between bonding and antibonding orbitals should depend on distance of the two atoms. However, exploring molecular orbitals of two natural atoms with tunable distance has remained an…
Energy levels of a two-body atomic system in an external homogeneous magnetic field can be presented in terms of magnetic moments of their components, however, those magnetic moments being related to bound particles differ from their free…
External control over the electron and hole wavefunctions geometry and topology is investigated in a p-i-n diode embedding a dot-in-a-well InAs/GaAsSb quantum structure with type II band alignment. We find highly tunable exciton dipole…
Self-assembled InGaAs/GaAs quantum dots (QDs) are of particular importance for the deterministic generation of spin-photon entanglement. One promising scheme relies on the Larmor precession of a spin in a transverse magnetic field, which is…
Spin properties of single electron states in laterally coupled quantum dots in the presence of a perpendicular magnetic field are studied by exact numerical diagonalization. Dresselhaus (linear and cubic) and Bychkov-Rashba spin-orbit…
We study the effect of electron-electron interactions on the resonant-tunneling spectroscopy of the localized states in a barrier. Using a simple model of three localized states, we show that, due to the Coulomb interactions, a single state…
We theoretically investigate the Stark shift of the exciton goundstate in two vertically coupled quantum dots as a function of the interdot distance. The coupling is shown to enhance the tuneability of the linear optical properties,…
We investigate transport through a single-level quantum dot coupled to noncollinearly magnetized ferromagnets in the presence of localized spins in either the tunnel barrier or on the quantum dot. For a spin embedded in the tunnel barrier,…
We use the effective g-factor of subgap states, g*, in hybrid InAs nanowires with an epitaxial Al shell to investigate how the superconducting density of states is distributed between the semiconductor core and the metallic shell. We find a…
The rapid progress of hole spin qubits in group IV semiconductors has been driven by their potential for scalability. This is owed to the compatibility with industrial manufacturing standards, as well as the ease of operation and…
The fine structure of the neutral exciton in a single self assembled InGaAs quantum dot is investigated under the effect of a lateral electric field. Stark shifts up to 1.5 meV, an increase in linewidth, and a decrease in photoluminescence…
We analyze the effective $g^*$ factors and their dependence on the orientation of the external magnetic field for a quantum point contact defined in the two-dimensional electron gas. The paper simulates the experimental procedure for…
We perform polarization-resolved magneto-optical measurements on single InAsP quantum dots embedded in an InP nanowire. In order to determine all elements of the electron and hole $g$-factor tensors, we measure in magnetic field with…
We demonstrate a tunable Kondo effect realized in small quantum dots. We can switch our dot from a Kondo impurity to a non-Kondo system as the number of electrons on the dot is changed from odd to even. We show that the Kondo temperature…
Silicon quantum dots are considered an excellent platform for spin qubits, partly due to their weak spin-orbit interaction. However, the sharp interfaces in the heterostructures induce a small but significant spin-orbit interaction which…
We use time-resolved Kerr rotation to demonstrate the optical and electronic tuning of both the electronic and local moment (Mn) spin dynamics in electrically gated parabolic quantum wells derived from II-VI diluted magnetic semiconductors.…
In this chapter quantum many body theoretical methods have been used to study properties of GaAs - and InAs - based, small semiconductor compound quantum dots (QDs) containing manganese or vanadium atoms. Interest to such systems has grown…
We investigate the effect of uniaxial stress on InGaAs quantum dots in a charge tunable device. Using Coulomb blockade and photoluminescence, we observe that significant tuning of single particle energies (~ -0.5 meV/MPa) leads to variable…
We have demonstrated by electroluminescence the injection of spin polarized electrons through Co/Al2O3/GaAs tunnel barrier into p-doped InAs/GaAs quantum dots embedded in a PIN GaAs light emitting diode. The spin relaxation processes in the…