External control over the electron and hole wavefunctions geometry and topology is investigated in a p-i-n diode embedding a dot-in-a-well InAs/GaAsSb quantum structure with type II band alignment. We find highly tunable exciton dipole moments and largely decoupled exciton recombination and ionization dynamics. We also predicted a bias regime where the hole wavefunction topology changes continuously from quantum dot-like to quantum ring-like as a function of the external bias. All these properties have great potential in advanced electro-optical applications and in the investigation of fundamental spin-orbit phenomena.
@article{arxiv.1506.02439,
title = {Type II InAs/GaAsSb Quantum Dots: Highly Tunable Exciton Geometry and Topology},
author = {José M. Llorens and Lukasz Wewior and Edson R. Cardozo de Oliveira and José M. Ulloa and Antonio D. Utrilla and Álvaro Guzmán and Adrián Hierro and Benito Alén},
journal= {arXiv preprint arXiv:1506.02439},
year = {2015}
}