Related papers: Electrically tunable g-factors in quantum dot mole…
Theoretical analysis of the experimental data for the energy levels of two interacting electrons confined by a finite Gaussian potential in a 2D quantum dot and subjected to a uniform magnetic field perpendicular to the plane of the dot is…
We investigate non-linear magneto-transport in a Hall bar device made from a strained InGaAs/InP quantum well: a material system with attractive spintronic properties. From extensive maps of the longitudinal differential resistance (r_xx)…
In this paper, we present theoretical investigation of the zero-frequency shot noise spectra in electron tunneling through an interacting quantum dot connected to two ferromagnetic leads with possibility of spin-flip scattering between the…
The exciton recombination and spin dynamics are investigated both experimentally and theoretically in an ensemble of indirect band gap (In,Al)As/AlAs quantum dots (QDs) with type-I band alignment. The magnetic-field-induced circular…
Mixed spin-(1/2,1/2,1) trimer with two different Land\'{e} g-factors and two different exchange couplings is considered. The main feature of the model is non-conserving magnetization. The Hamiltonian of the system is diagonalized…
We consider a one-dimensional spin-orbit-coupled nanowire quantum dot, driven by external electric and magnetic fields, and theoretically formulate an electric mechanism to interfere its electron orbits. Owing to the existence of spin-orbit…
Quasi-static transport measurements are employed to characterize a few electron quantum dot electrostatically defined in a GaAs/AlGaAs heterostructure. The gate geometry allows observations on one and the same electron droplet within a wide…
We show that in a magnetic nanowire with double magnetic domain walls, quantum interference results in spin-split quasistationary states localized mainly between the domain walls. Spin-flip-assisted transmission through the domain structure…
A magnetophotoluminescence study of the carrier transfer with hybrid InAs/GaAs quantum dot(QD)-InGaAs quantum well (QW) structures is carried out where we observe an unsual dependence of the photoluminescence (PL) on the GaAs barrier…
Electric fields are increasingly used for coherently manipulating spin states in semiconductor and molecular systems. Here we discuss the spin manipulation allowed by the modulation of the main parameters entering the Hamiltonians of…
We present an optical study of closely-spaced self-assembled InAs/GaAs quantum dots. The energy spectrum and correlations between photons subsequently emitted from a single pair provide not only clear evidence of coupling between the…
Single holes confined in semiconductor quantum dots are a promising platform for spin qubit technology, due to the electrical tunability of the $g$-factor of holes. However, the underlying mechanisms that enable electric spin control remain…
We report on the influence of hyperfine interaction on the optical orientation of singly charged excitons X+ and X- in self-assembled InAs/GaAs quantum dots. All measurements were carried out on individual quantum dots studied by…
We have studied the variation in fine-structure splitting (FSS) under application of vertical electric field in a range of quantum dots grown by different methods. In each sample we confirm that this energy splitting changes linearly over…
The transport spectrum of a strongly tunnel-coupled one-electron double quantum dot electrostatically defined in a GaAs/AlGaAs heterostructure is studied. At finite source-drain-voltage we demonstrate the unambiguous identification of the…
Motivated by recent experiments, in which the Kondo effect has been observed for the first time in a double quantum-dot structure, we study electron transport through a system consisting of two ultrasmall, capacitively-coupled dots with…
We study the interference between the Fano and Kondo effects in a side-coupled double-quantum- dot system where one of the quantum dots couples to conduction electron bath while the other dot only side-couples to the first dot via…
We consider a new quantum gate mechanism based on electron spins in coupled semiconductor quantum dots. Such gates provide a general source of spin entanglement and can be used for quantum computers. We determine the exchange coupling J in…
We propose and analyze a new method for manipulation of a heavy hole spin in a quantum dot. Due to spin-orbit coupling between states with different orbital momenta and opposite spin orientations, an applied rf electric field induces…
The modification of acoustic phonons in semiconductor nanostructures embedded in a host crystal is investigated including corrections due to strain within continuum elasticity theory. Effective elastic constants are calculated employing…