Electron-Phonon Interaction in Embedded Semiconductor Nanostructures
Materials Science
2009-11-11 v1
Abstract
The modification of acoustic phonons in semiconductor nanostructures embedded in a host crystal is investigated including corrections due to strain within continuum elasticity theory. Effective elastic constants are calculated employing {\em ab initio} density functional theory. For a spherical InAs quantum dot embedded in GaAs barrier material, the electron-phonon coupling is calculated. Its strength is shown to be suppressed compared to the assumption of bulk phonons.
Cite
@article{arxiv.cond-mat/0610404,
title = {Electron-Phonon Interaction in Embedded Semiconductor Nanostructures},
author = {Frank Grosse and Roland Zimmermann},
journal= {arXiv preprint arXiv:cond-mat/0610404},
year = {2009}
}