Related papers: Spin accumulation probed in multiterminal lateral …
We consider thermoelectric transport properties of the edge states of a two dimensional topological insulator in a double quantum point contact geometry coupled to two thermally biased reservoirs. Both spin-preserving and spin-flipping…
Many proposed and realized spintronic devices involve spin injection and accumulation at an interface between a ferromagnet and a non-magnetic material. We examine the electric field, voltage profile, charge distribution, spin fluxes, and…
We employ the spin absorption technique in lateral spin valves to extract the spin diffusion length of Permalloy (Py) as a function of temperature and resistivity. A linear dependence of the spin diffusion length with conductivity of Py is…
The effect of spin-disorder scattering on perpendicular transport in a magnetic monolayer is considered within the single-site Coherent Potential Approximation (CPA). The exchange interaction between a conduction electron and localized…
We experimentally show evidence for the presence of spin accumulation in localized states at ferromagnet-silicon interfaces, detected by electrical Hanle effect measurements in CoFe/$n^{+}$-Si/$n$-Si lateral devices. By controlling the…
Relaxation of electronic spins in metals is significantly enhanced whenever a Fermi surface crosses Brillouin zone boundaries, special symmetry points, or lines of accidental degeneracy. A realistic calculation shows that if aluminum had…
The spin accumulation in an n-GaAs channel produced by spin extraction into a (Ga,Mn)As contact is measured by cross-sectional imaging of the spin polarization in GaAs. The spin polarization is observed in a 1 \mum thick n-GaAs channel with…
Electrical injection of spin-polarized electrons into a semiconductor, large spin diffusion length, and an integration friendly platform are desirable ingredients for spin-based devices. Here we demonstrate lateral spin injection and…
Using long-distance lateral devices, spin transport near the interface of Si and its native oxide (SiO2) is studied by spin-valve measurements in an in-plane magnetic field and spin precession measurements in a perpendicular magnetic field…
We consider the problem of tunneling between two leads via a localized spin 1/2 or any other microscopic system which can be modeled by a two-level Hamiltonian. We assume that a constant magnetic field ${\bf B}_0$ acts on the spin, that…
Spin accumulation in a 2D electron gas with Rashba spin-orbit interaction subject to an electric field can take place without bulk spin currents (edge spin Hall effect). This is demonstrated for the collisional regime using the…
The objective of this paper is to draw attention to a possible new approach for measuring the spin excitation spectrum of a spin array by placing it in intimate contact with the channel of a spin-valve device in an anti-parallel (AP)…
Spin current injection and spin accumulation near a ferromagnetic insulator (FI)/nonmagnetic metal (NM) bilayer film under a thermal gradient is investigated theoretically. Using the Fermi golden rule and the Boltzmann equations, we find…
The interpretation of some recent measurements of spin-dependent voltage for which the electric conduction does not play a role rises some new fundamental questions about the effects of spin-dependent heat currents. A two spin-channel model…
Based on a Monte Carlo method, we investigate the influence of transport conditions on the electron spin relaxation in GaAs. The decay of initial electron spin polarization is calculated as a function of distance under the presence of…
In this letter, we first show electrical spin injection in the germanium conduction band at room temperature and modulate the spin signal by applying a gate voltage to the channel. The corresponding signal modulation agrees well with the…
The finite spin lifetime in solids is often considered a major hindrance for the development of spintronic devices, which typically require cryogenic temperatures to mitigate this phenomenon. In this work we show that this feature can…
Electrical spin transport and accumulation have been measured in highly Si doped Al0.3Ga0.7As utilizing a lateral spin transport device. Persistent photoconductivity allows for the tuning of the effective carrier density of the channel…
Spin accumulation and spin precession in single-layer graphene are studied by non-local spin valve measurements at room temperature. The dependence of the non-local magnetoresistance on electrode spacing is investigated and the results…
A high reproducibility in the performance of cobalt/copper and permalloy/copper lateral spin valves with transparent contacts is obtained by optimizing the interface quality and the purity of copper. This allows us to study comprehensively…