Spin transport and accumulation in the persistent photoconductor Al$_{0.3}$Ga$_{0.7}$As

Jennifer Misuraca; Joon-Il Kim; Jun Lu; Kangkang Meng; Lin Chen; Xuezhe Yu; Jianhua Zhao; Peng Xiong; Stephan von Molnár

doi:10.1063/1.4802259

Spin transport and accumulation in the persistent photoconductor Al$_{0.3}$Ga$_{0.7}$As

Materials Science 2014-03-05 v1

Authors: Jennifer Misuraca , Joon-Il Kim , Jun Lu , Kangkang Meng , Lin Chen , Xuezhe Yu , Jianhua Zhao , Peng Xiong , Stephan von Molnár

View on arXiv ↗ PDF ↗ DOI ↗

Abstract

Electrical spin transport and accumulation have been measured in highly Si doped Al0.3Ga0.7As utilizing a lateral spin transport device. Persistent photoconductivity allows for the tuning of the effective carrier density of the channel material in situ via photodoping. Hanle effect measurements are completed at various carrier densities and the measurements yield spin lifetimes on the order of nanoseconds, an order of magnitude smaller than in bulk GaAs. These measurements illustrate that this methodology can be used to obtain a detailed description of how spin lifetimes depend on carrier density in semiconductors across the metal-insulator transition.

Keywords

spin transport spin accumulation persistent photoconductivity AlGaAs Hanle effect spin lifetime carrier density

Cite

@article{arxiv.1402.5566,
  title  = {Spin transport and accumulation in the persistent photoconductor Al$_{0.3}$Ga$_{0.7}$As},
  author = {Jennifer Misuraca and Joon-Il Kim and Jun Lu and Kangkang Meng and Lin Chen and Xuezhe Yu and Jianhua Zhao and Peng Xiong and Stephan von Molnár},
  journal= {arXiv preprint arXiv:1402.5566},
  year   = {2014}
}

Spin transport and accumulation in the persistent photoconductor Al$_{0.3}$Ga$_{0.7}$As

Abstract

Keywords

Cite

Related papers