The spin-conserving length-scale is a key parameter determining functionalities of a broad range of spintronic devices including magnetic multilayer spin-valves in the commercialized magnetic memories or lateral spin transistors in experimental spin-logic elements. Spatially resolved optical pump-and-probe experiments in the lateral devices allow for the direct measurement of the lengthscale and the time-scale at which spin-information is transferred from the injector to the detector. Using this technique, we demonstrate that in an undoped GaAs/AlGaAs layer spins are detected at distances reaching more than ten microns from the injection point at times as short as nanoseconds after the pump-pulse. The observed unique combination of the long-range and highrate electronic spin-transport requires simultaneous suppression of mechanisms limiting the spin life-time and mobility of carriers. Unlike earlier attempts focusing on elaborate doping, gating, or heterostructures we demonstrate that the bare GaAs/AlGaAs layer intrinsically provides superior spin-transport characteristics whether deposited directly on the substrate or embedded in complex heterostructures.
@article{arxiv.1510.01978,
title = {Nanosecond spin-transfer over tens of microns in a bare GaAs/AlGaAs layer},
author = {L. Nádvorník and P. Němec and T. Janda and K. Olejník and V. Novák and V. Skoromets and H. Němec and P. Kužel and F. Trojánek and T. Jungwirth and J. Wunderlich},
journal= {arXiv preprint arXiv:1510.01978},
year = {2016}
}