Related papers: Spin accumulation probed in multiterminal lateral …
In recent years, electrical spin injection and detection has grown into a lively area of research in the field of spintronics. Spin injection into a paramagnetic material is usually achieved by means of a ferromagnetic source, whereas the…
The generation, manipulation and detection of spin-polarized electrons in nanostructures define the main challenges of spin-based electronics[1]. Amongst the different approaches for spin generation and manipulation, spin-orbit coupling,…
We theoretically investigate a manipulation method of nonequilibrium spin accumulation in the paramagnetic normal metal of a spin pumping system, by using the spin precession motion combined with the spin diffusion transport. We demonstrate…
Charge-to-spin conversion in various material systems is the key for the fundamental understanding of spin-orbitronis as well as the development of efficient means to manipulate the magnetization. We report the direct spatial imaging of…
A distinguishing feature of spin accumulation in ferromagnet-semiconductor devices is precession of the non-equilibrium spin population of the semiconductor in a magnetic field. This is the basis for detection techniques such as the Hanle…
Spin dependent single electron tunneling in ferromagnetic double junctions is analysed theoretically in the limit of sequential tunneling. The influence of discrete energy spectrum of the central electrode (island)on the spin accumulation,…
When charge current passes through a normal metal that exhibits spin Hall effect, spin accumulates at the edge of the sample in the transverse direction. We predict that this spin accumulation, or spin voltage, enables quantum tunneling of…
The elimination of extrinsic sources of spin relaxation is key in realizing the exceptional intrinsic spin transport performance of graphene. Towards this, we study charge and spin transport in bilayer graphene-based spin valve devices…
We propose a scheme to read out the spin of a single electron quantum bit in a surface Paul trap using oscillating magnetic field gradients. The readout sequence is composed of cooling, driving, amplification and detection of the electron's…
We demonstrate all optical electron spin initialization, storage and readout in a single self-assembled InGaAs quantum dot. Using a single dot charge storage device we monitor the relaxation of a single electron over long timescales…
We study theoretically the effect of spin relaxation on the spin transport in a ferromagnet/superconductor(FM/SC) tunnel junction. When spin-polarized electrons are injected into the SC from the FM, nonequilibrium spin accumulation as well…
We provide a theoretical description of diffusive charge and spin transport in hybrid devices containing altermagnets. Based on recently derived drift--diffusion equations for coupled charge and spin dynamics and general boundary…
Electrical spin injection from ferromagnetic metals into graphene is hindered by the impedance mismatch between the two materials. This problem can be reduced by the introduction of a thin tunnel barrier at the interface. We present room…
A lateral array of ferromagnetic tunnel junctions is used to inject and detect non-equilibrium quasi-particle spin distribution in a superconducting strip made of Al. The strip width and thickness is kept below the quasi particle spin…
In order to explore the spin accumulation, evaluating the spin galvanic and spin Hall effect, we utilize the semi-classical Boltzmann equation based on input from the relativistic Korringa-Kohn-Rostoker Green's function method, within the…
An electric current flowing in a ferromagnetic metal carries spin angular momentum, i.e. it is spin-polarized. Here, we measure the spin-wave Doppler shift induced by the transfer of angular momentum from the diffusive spin-polarized…
We study spin relaxation and diffusion in an electron-spin ensemble of nitrogen impurities in diamond at low temperature (0.25-1.2 K) and polarizing magnetic field (80-300 mT). Measurements exploit mode- and temperature-dependent coupling…
The spin degree of freedom can play an essential role in determining the electrical transport properties of spin-polarized electron systems in metals or semiconductors. In this article, I address the dependence of spin-subsystem chemical…
We describe theoretically the process of multi-beam reflection in a two-dimensional electron system with a lateral potential barrier. Due to spin-orbital interaction, the reflection process leads to the formation of three beams with…
In Si, spin-phonon interaction is the primary spin relaxation mechanism. At low temperatures, the absence of spin-phonon relaxation will lead to enhanced spin accumulation. Spin accumulation may change the electro-thermal transport within…