Related papers: Spin accumulation probed in multiterminal lateral …
We study the electrical injection and detection of spin currents in a lateral spin valve device, using permalloy (Py) as ferromagnetic injecting and detecting electrodes and copper (Cu) as non-magnetic metal. Our multi-terminal geometry…
We study the concept of spin heat accumulation in excited spin valves, more precisely the effective electron temperature that may become spin dependent, both in linear response and far from equilibrium. A temperature or voltage gradient…
We show that a supercurrent carried by spinless singlet Cooper pairs can induce a spin accumulation in the normal metal interlayer of a Josephson junction. This phenomenon occurs when a nonequilibrium spin-energy mode is excited in the…
Spin accumulation is generated by injecting an unpolarized charge current into a channel of GaAs two-dimensional electron gas subject to an in-plane magnetic field, then measured in a non-local geometry. Unlike previous measurements that…
We show that the accumulation of spin-polarized electrons at a forward-biased Schottky tunnel barrier between Fe and n-GaAs can be detected electrically. The spin accumulation leads to an additional voltage drop across the barrier that is…
The results of scanning tunneling microscopy experiments using iron-coated tungsten tips and current-carrying bismuth selenide ($Bi_2Se_3$) samples are reported. Asymmetry in tunneling currents with respect to the change in the direction of…
We propose a possible experimental setup for nonreciprocal electron transport in a lateral spin valve due to noncoplanar distribution of magnetic moment (and field) in the system. Some metals (Al, Cu) and semiconductors (GaAs, InSb etc.)…
Spin-polarized current through an Al nanoparticle in tunnel contact with two ferromagnets is measured as a function of the direction of the applied magnetic field. The nanoparticle filters the spin of injected electrons along a direction…
We report on spin injection experiments at a Co/Al$_2$O$_3$/GaAs interface with electrical detection. The application of a transverse magnetic field induces a large voltage drop $\Delta V$ at the interface as high as 1.2mV for a current…
Using a density matrix formulation for the effective action, we obtain a set of macroscopic equations that describe spin accumulation in a non-homogeneous ferromagnet. We give a new expression for the spin current which extends previous…
An ultrafast spin current can be induced by femtosecond laser excitation in a ferromagnetic (FM) thin film in contact with a nonmagnetic (NM) metal. The propagation of an ultrafast spin current into NM metal has recently been found in…
We treat the spin injection and extraction via a ferromagnetic metal/semiconductor Schottky barrier as a quantum scattering problem. This enables the theory to explain a number of phenomena involving spin-dependent current through the…
We study transport in ferromagnetic single-electron transistors. The non- equilibrium spin accumulation on the island caused by a finite current through the system is described by a generalized theory of the Coulomb blockade. It enhances…
The non-equilibrium transportation of two-dimensional electrons through a narrow channel is investigated under the influence of the Rashba interaction. By introducing suitable lifetime in the Green's function, the average spin values can be…
We study the electronic transport through a noncollinear single-electron spin-valve transistor. It consists of a small metallic island weakly coupled to two ferromagnetic leads with noncollinear magnetization directions. The electric…
For the technologically relevant spin Hall effect most theoretical approaches rely on the evaluation of the spin-conductivity tensor. In contrast, for most experimental configurations the generation of spin accumulation at interfaces and…
We consider a mesoscopic {\it ballistic} structure with Rashba spin-orbit splitting of the electron spectrum. The ballistic region is attached to the leads with a voltage applied between them. We calculate the edge spin density which…
The stationary state of the spin-Hall bar is studied in the framework of a variational approach that includes non-equilibrium screening effects. The minimization of the power dissipated in the system is performed with taking into account…
Injection and detection of spin accumulation in a semiconductor having localized states at the interface is evaluated. Spin transport from a ferromagnetic contact by sequential, two-step tunneling via interface states is treated not in…
In a recent publication, we demonstrated electrical spin injection and detection in n-type silicon at temperatures up to 500K using ferromagnetic metal / SiO2 tunnel barrier contacts in a three-terminal geometry (Nature Commun. 2:245…