Related papers: Antisite effect on ferromagnetism in (Ga,Mn)As
By studying the Hall effect in a series of low resistivity Ga1-xMnxAs samples, accurate values for the hole density p, Mn concentration x, and Curie temperature Tc are obtained over the range 0.015=<x=<0.08. The hole density corresponds to…
We use molecular beam epitaxy to develop a gate tunable p-n heterojunction that interfaces a canonical Dirac semimetal, Cd$_3$As$_2$, and a ferromagnetic semiconductor, In$_{1-x}$Mn$_x$As, with perpendicular magnetic anisotropy.…
We report the effects of electron doping on the ground state of a diamagnetic semiconductor FeGa$_{3}$ with a band gap of 0.5 eV. By means of electrical resistivity, magnetization and specific heat measurements we have found that gradual…
The magnetic, transport, and structural properties of (Ga,Cr)As are reported. Zincblende Ga$_{1-x}$Cr$_{x}$As was grown by low-temperature molecular beam epitaxy (MBE). At low concentrations, x$\sim$0.1, the materials exhibit unusual…
We present an extensive density functional theory study of the electronic, magnetic and transport properties of GaAs and AlAs digital ferromagnetic heterostructures. These can be obtained by $\delta$-doping with Mn the GaAs layers of a…
We performed high pressure experiments on La(0.8)Ca(0.2-x)Sr(x)MnO(3) (LCSMO) (0<x< 0.2) ceramic samples in order to analyze the validity of the well known relation between the A mean ionic radius (<rA>) and the Curie temperature Tc of…
The effects of sintering temperature (Ts) and chemical substitution on the structural and magnetic properties of manganite compounds La1-xSrxMn1-yFeyO3 (0.025 <= x <= 0.7; y= 0.01,0.15) are explored in a search to optimize their…
Quantum anomalous Hall effect (QAHE) has been experimentally observed in magnetically doped topological insulators. However, ultra-low temperature (usually below 300 mK), which is mainly attributed to inhomogeneous magnetic doping, becomes…
We describe a detailed study of the structural, magnetic, and magneto-transport properties of single-crystal, n-type, Mn-doped Bi2Te3 thin films grown by molecular beam epitaxy. With increasing Mn concentration, the crystal structure…
We have grown the ferromagnetic semiconductor GaMnAs containing up to 10% Mn by migration enhanced epitaxy at a substrate temperature of 150^oC. The alternate supply of As2 molecules and Ga and Mn atoms made it possible to grow single…
We report the experimental evidence in support of room temperature ferromagnetism in Ni doped 3C-SiC. Curie temperature is found to be > 350 K. Temperature dependent Electron paramagnetic resonance (EPR) study reveals that the valence state…
Wurtzite (Ga,Mn)N films showing ferromagnetic behaviour at room temperature were successfully grown on sapphire(0001) substrates by molecular beam epitaxy using ammonia as nitrogen source. Magnetization measurements were carried out by a…
Mn_2V_1-xCo_xZ (Z=Ga,Al and x=0, 0.25, 0.5, 0.75, 1) Heusler compounds have been synthesized to investigate the effect of Co substitution at the V site on the magnetic moment and Curie temperatures of half-metallic ferrimagnets Mn_2VGa and…
Electronic and magnetic properties of Ga$_{1-x}$Mn$_{x}$As, obtained from first-principles calculations employing the hybrid HSE06 functional, are presented for $x=6.25\%$ and $12.5\%$ under pressures ranging from 0 to 15 GPa. In agreement…
We have found high ferromagnetic transition temperature in Mn delta-doped GaAs-based heterostructures grown on GaAs(001) substrates by molecular beam epitaxy. A 0.3 ML Mn d-doped GaAs samples showed high resistivity at low temperature and…
Variable temperature scanning tunneling microscopy/spectroscopy studies on single crystals and epitaxial thin films of hole-doped manganites, which show colossal magnetoresistance, have been done. We have investigated the variation of the…
Magnetic semiconductors are attracting high interest because of their potential use for spintronics, a new technology which merges electronics and manipulation of conduction electron spins. (GaMn)As and (GaMn)N have recently emerged as the…
We demonstrate electrical control of ferromagnetism in field-effect transistors with a trilayer quantum well (QW) channel containing an ultrathin n-type ferromagnetic semiconductor (In,Fe)As layer. A gate voltage is applied to control the…
Magnetotransport properties of ferromagnetic semiconductor (Ga,Mn)As have been investigated. Measurements at low temperature (50 mK) and high magnetic field (<= 27 T) have been employed in order to determine the hole concentration p =…
(La1-xSrx)(Zn1-yMny)AsO is a two dimensional diluted ferromagnetic semiconductor that has the advantage of decoupled charge and spin doping. The substitution of Sr2+ for La3+ and Mn2+ for Zn2+ into the parent semiconductor LaZnAsO…