Related papers: Antisite effect on ferromagnetism in (Ga,Mn)As
We report on detailed investigations of the electronic and magnetic properties of ferromagnetic GaMnAs layers, which have been fabricated by low-temperature molecular-beam epitaxy. Superconducting quantum interference device measurements…
The modifications in the electronic structure of Ni_{2+x}Mn_{1-x}Ga by Ni doping have been studied using full potential linearized augmented plane wave method and ultra-violet photoemission spectroscopy. Ni 3d related electron states appear…
We show that effective electrical control of the magnetic properties in the ferromagnetic semiconductor (Ga,Mn)As is possible using the strain induced by a piezoelectric actuator even in the limit of high doping levels and high Curie…
The discovery of ferromagnetism in Mn doped GaAs [1] has ignited interest in the development of semiconductor technologies based on electron spin and has led to several proof-of-concept spintronic devices [2-4]. A major hurdle for realistic…
We have prepared the dilute magnetic semiconductor (DMS) InMnAs with different Mn concentrations by ion implantation and pulsed laser melting. The Curie temperature of the In1-xMnxAs epilayer depends on the Mn concentration x, reaching 82 K…
(Ga,Mn)As in wurtzite crystal structure, is coherently grown by molecular beam epitaxy on the {1100} side facets of wurtizte (Ga,In)As nanowires and further encapsulated by (Ga,Al)As and low temperature GaAs. For the first time a true…
We have investigated the thermal, transport and magnetic properties of URh$_{1-x}$Ru$_x$Ge alloys near the critical concentration $x_{cr} = 0.38$ for the suppression of ferromagnetic order. The Curie temperature vanishes linearly with $x$…
Based on first-principles electron structure calculations and employing the frozen-magnon approximation we study the exchange interactions in a series of transition-metal binary alloys crystallizing in the zinc-blende structure and…
The pressure dependence of electronic structure, exchange interactions and Curie temperature in ferromagnetic Heusler alloy Ni2MnSn has been studied theoretically within the framework of the density-functional theory. The calculation of the…
We have investigated the evolution of ferromagnetic order in the correlated metal URhGe (Curie temperature $T_{\rm C} = $9.5 K) by chemical substitution of Ru, Co and Si. Polycrystalline samples URh$_{1-x}$Ru$_x$Ge ($x \leq $0.6),…
We demonstrated the control of ferromagnetism in a surface quantum well containing a 5-nm-thick n-type ferromagnetic semiconductor (In,Fe)As layer sandwiched between two InAs layers, by manipulating the carrier wavefunction. The Curie…
We report the successful growth and the impurity scattering effect of single crystals of Na(Fe$_{0.97-x}$Co$_{0.03}$T$_x$)As (T=Cu, Mn). The temperature dependence of DC magnetization at high magnetic fields is measured for different…
Here we report on the effect of rare earth Gd-doping on the magnetic properties and magnetotransport of GaN two-dimensional electron gasses (2DEGs). Samples are grown by plasma-assisted molecular beam epitaxy and consist of AlN/GaN…
Employing {\it state of the art} high resolution photoemission spectroscopy, we studied the temperature evolution of the electronic structure of EuFe$_2$As$_2$, an unique pnictide, where antiferromagnetism of Eu layer survives within the…
After more than a decade of intensive research in the field of diluted magnetic semiconductors (DMS), the nature and origin of ferromagnetism, especially in III-V compounds is still controversial. Many questions and open issues are under…
$\text{La}_{5}\text{Co}_{2}\text{Ge}_{3}$ is an itinerant ferromagnet with a Curie temperature, $T_C$, of $\sim$ 3.8 K and a remarkably small saturated moment of 0.1 $\mu_{B}/\text{Co}$. Here we present the growth and characterization of…
A partial substitution of Sm by Ce can have drastic effects on the magnetic performance, because it will introduce strain in the structure and breaks the lattice symmetry in a way that enhances the contribution of the Co atoms to…
A detailed study of the electronic transport and magnetic properties of Fe$_{1-x}$Cu$_x$Cr$_2$S$_4$ ($x \leq 0.5$) on single crystals is presented. The resistivity is investigated for $2 \leq T \leq 300$ K in magnetic fields up to 14 Tesla…
We consider a mean-field approach to the hole-mediated ferromagnetism in III-V Mn-based semiconductor compounds to discuss the dependence of the hole density on that of Mn sites in Ga_{1-x}Mn_xAs. The hole concentration, p, as a function of…
Magnetic susceptibility $\chi$ of Bi$_{2-x}$Mn$_{x}$Se$_3$ ($x = 0.01-0.2$) was measured in the temperature range $4.2-300$ K. For all the samples, a Curie-Weiss behaviour of $\chi(T)$ was revealed with effective magnetic moments of Mn ions…