The Hall effect and hole densities in high Tc GaMnAs thin films

K. W. Edmonds; K. Y. Wang; R. P. Campion; A. C. Neumann; C. T. Foxon; B. L. Gallagher; P. C. Main

The Hall effect and hole densities in high Tc GaMnAs thin films

Materials Science 2007-05-23 v3 Mesoscale and Nanoscale Physics

Authors: K. W. Edmonds , K. Y. Wang , R. P. Campion , A. C. Neumann , C. T. Foxon , B. L. Gallagher , P. C. Main

Abstract

By studying the Hall effect in a series of low resistivity Ga1-xMnxAs samples, accurate values for the hole density p, Mn concentration x, and Curie temperature Tc are obtained over the range 0.015=<x=<0.08. The hole density corresponds to 90% of the Mn concentration at low x, and has a maximum value of 1.0x10-27 m-3 when Tc=125K for x=0.06. This data allows the first meaningful comparison of mean field predicted Curie temperatures with experiment over a wide range of x. The theory is in qualitative agreement with experiment, but overestimates Tc at large x and underestimates TC at low x.

Keywords

Hall effect GaMnAs thin films hole density Curie temperature mean field theory

Cite

@article{arxiv.cond-mat/0205517,
  title  = {The Hall effect and hole densities in high Tc GaMnAs thin films},
  author = {K. W. Edmonds and K. Y. Wang and R. P. Campion and A. C. Neumann and C. T. Foxon and B. L. Gallagher and P. C. Main},
  journal= {arXiv preprint arXiv:cond-mat/0205517},
  year   = {2007}
}

Comments

Submitted to Appl. Phys. Lett., 8 pages, 4 figs

The Hall effect and hole densities in high Tc GaMnAs thin films

Abstract

Keywords

Cite

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