Curie temperature versus hole concentration in field-effect structures of Ga1-xMnxAs

Y. Nishitani; D. Chiba; M. Endo; M. Sawicki; F. Matsukura; T. Dietl; H. Ohno

doi:10.1103/PhysRevB.81.045208

Curie temperature versus hole concentration in field-effect structures of Ga1-xMnxAs

Materials Science 2015-05-18 v1

Authors: Y. Nishitani , D. Chiba , M. Endo , M. Sawicki , F. Matsukura , T. Dietl , H. Ohno

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Abstract

The Curie temperature TC is investigated as a function of the hole concentration p in thin films of ferromagnetic semiconductor (Ga,Mn)As. The magnetic properties are probed by transport measurements and p is varied by the application of an external electric field in a field-effect transistor configuration. It is found that TC is proportional to p^{\gamma}, where the exponent \gamma = 0.19 \pm 0.02 over a wide range of Mn compositions and channel thicknesses. The magnitude of gamma is reproduced by a p-d Zener model taking into account nonuniform hole distribution along the growth direction, determined by interface states and the applied gate electric fields.

Keywords

Curie temperature hole concentration ferromagnetic semiconductor (Ga,Mn)As field-effect transistor p-d Zener model

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@article{arxiv.1001.3909,
  title  = {Curie temperature versus hole concentration in field-effect structures of Ga1-xMnxAs},
  author = {Y. Nishitani and D. Chiba and M. Endo and M. Sawicki and F. Matsukura and T. Dietl and H. Ohno},
  journal= {arXiv preprint arXiv:1001.3909},
  year   = {2015}
}

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8 pages, 7 figures

Curie temperature versus hole concentration in field-effect structures of Ga1-xMnxAs

Abstract

Keywords

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