Ferromagnetic semiconductor (In,Ga,Mn)As with Curie temperature above 100 K

T. Slupinski; H. Munekata; A. Oiwa

doi:10.1063/1.1457526

Ferromagnetic semiconductor (In,Ga,Mn)As with Curie temperature above 100 K

Materials Science 2009-11-07 v1

Authors: T. Slupinski , H. Munekata , A. Oiwa

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Abstract

We have grown (InyGa1-y)1-xMnxAs ferromagnetic semiconductor layers with Mn composition x up to 0.13 on InP substrates by molecular beam epitaxy. Near the lattice-matched composition, i.e., y ~ 0.53, the Curie temperature increases linearly with the ferromagnetically effective Mn composition x_eff, following the empirical equation T_C=1300x_eff. We obtained Curie temperatures above 100 K when x is relatively high (x>0.1; x_eff>0.08) and the hole concentration is in the order of 10^19 cm^-3.

Keywords

ferromagnetic semiconductor Curie temperature Mn composition hole concentration molecular beam epitaxy

Cite

@article{arxiv.cond-mat/0201363,
  title  = {Ferromagnetic semiconductor (In,Ga,Mn)As with Curie temperature above 100 K},
  author = {T. Slupinski and H. Munekata and A. Oiwa},
  journal= {arXiv preprint arXiv:cond-mat/0201363},
  year   = {2009}
}

Comments

13 pages, 3 figures; Applied Physics Letters, March, 2002

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