Related papers: Antisite effect on ferromagnetism in (Ga,Mn)As
The magnetic state of Nitrogen-doped MgO, with N substituting O at concentrations between 1% and the concentrated limit, is calculated with density-functional methods. The N atoms are found to be magnetic with a moment of 1 Bohr magneton…
We report the observation of giant magneto-caloric effect (MCE) in ferromagnetic shape memory alloys (FSMAs) of nominal compositions Ni$_2$Mn$_{1.36}$Sn$_{0.64-x}$Ga$_{x}$ ($x$ =0.24, 0.28 and 0.32). Irrespective of the Ga doping, all the…
We present a combined theoretical and experimental study of the ferromagnetic semiconductor (Ga,Mn)As which explains the remarkably large changes observed on low temperature annealing. Careful control of the annealing conditions allows us…
Magnetic transitions in AlAs two-dimensional electrons give rise to sharp resistance spikes within the quantum Hall effect. Such spikes are likely caused by carrier scattering at magnetic domain walls below the Curie temperature. We report…
Effect of misfit strain in the layers of (Ga,Mn)(Bi,As) quaternary diluted magnetic semiconductor, epitaxially grown on either GaAs substrate or (In,Ga)As buffer, on their magnetic and magneto-transport properties has been investigated.…
In an effort to produce Giant Magnetocaloric effect (GMCE) near room temperature, in a first ever such study, the austenite transformation temperature (As) was fine tuned to ferromagnetic Curie temperature (TC) in Ferromagnetic Shape Memory…
We present the manipulation of magnetic and electrical properties of (Ga,Mn)As by the adsorption of dye-molecules as a first step towards the realization of light-controlled magnetic-semiconductor/dye hybrid devices. A significant lowering…
The effect of Fe substitution on Mn sites in the colossal magnetoresistive compounds La0.65Ca0.35Mn1-xFexO3 with 0.01<x<0.1 have been studied. A careful study in the magnetic properties has been carried out by the measurement of ac…
In this paper we show that the widely accepted method of the determination of Curie temperature (TC) in (Ga,Mn)As samples, based on the position of the peak in the temperature derivative of the resistivity,completely fails in the case of…
Here, we study the magnetism of the distorted 1T-TcX2 (X=S,Se) based on first-principles calculation. The magnetism originates from the hole doping due to the density of states near the valence band edge having van Hove singularity feature.…
The crystal structure and magnetic properties of MnCoxFe1-xSi (x=0-0.5) compounds were investigated. With increasing Fe content, the unit cell changes anisotropically and the magnetic property evolves gradually: Curie temperature decreases…
Here we report on detailed studies of the magnetic properties of the wurtzite (Ga,Mn)As cylindrical shells. Ga$_{0.94}$Mn$_{0.06}$As shells have been grown by molecular beam epitaxy at low temperature as a part of multishell cylinders…
Digital alloys of GaSb/Mn have been fabricated by molecular beam epitaxy. Transmission electron micrographs showed good crystal quality with individual Mn-containing layers well resolved; no evidence of 3D MnSb precipitates was seen in…
We have studied selected rare earth doped and transition metal doped CeFe2 compounds by examining their structural, magnetic and magneto-thermal properties. With substitution of Ce by 5 and 10% Gd and 10% Ho, the Curie temperature can be…
We study quantum interference corrections to the conductivity in (Ga,Mn)As ferromagnetic semiconductors using a model with disordered valence band holes coupled to localized Mn moments through a p-d kinetic-exchange interaction. We find…
Resistivity measurements have been made on Mn$_{1-x}$Fe$_x$Si single crystals between 2 and 300K for $x$ = 0, 0.05, 0.08, 0.12 and 0.15. Fe doping is found to depress the magnetic ordering temperature from 30K for $x$ = 0 to below 2K for…
Investigations into the magnetic properties of sputtered Mn$_{x}$CoGe films in the range $0.8 \leq x \leq 2.5$ uncovered ferrimagnetic order, unlike the ferromagnetic order reported in bulk samples. These films formed hexagonal…
Growth of GaMnAs by molecular beam epitaxy is typically performed at low substrate temperatures (250C) and high As overpressures leading to the incorporation of excess As and Mn interstitials, which quench optical signals such as…
The Mn2Ge2Te6 shows intrinsic ferromagnetic (FM) order, with Curie temperature (Tc) of 316 K. The FM order origins from superexchange interaction between Mn and Te atoms. Mn2Ge2Te6 is half-metal (HM), and spin-\b{eta} electron is a…
We show that suitably-designed magnetic semiconductor heterostructures consisting of Mn delta-doped GaAs and p-type AlGaAs layers, in which the locally high concentration of magnetic moments of Mn atoms are controllably overlapped with the…