Related papers: Current Assisted Magnetization Switching in (Ga,Mn…
We describe recent progress and open questions in the physics of current-induced domain-wall displacement and creep in (Ga,Mn)As. Furthermore, the reasons are recalled why, despite strong disorder and localization, the p-d Zener model is…
We observe the occurrence of an Efros-Shklovskii gap in (Ga,Mn)As based tunnel junctions. The occurrence of the gap is controlled by the extent of the hole wave-function on the Mn acceptor atoms. Using k.p-type calculations we show that…
The research into insulating ferrimagnetic garnets has gained enormous momentum in the past decade. This is partly due to the improvement in the techniques to grow high-quality ultrathin films with desirable properties and the advances in…
The discovery that a spin polarized current can exert a large torque on a ferromagnet through a transfusion of spin angular momentum, offers a new way to control a magnetization by simple current injection, without the help of an applied…
Magnetic nanodevices usually include a free layer whose configuration can be changed by spin-polarized current via the spin transfer effect, and a fixed reference layer. Here, we demonstrate that the roles of the free and the reference…
We consider current-induced domain wall motion and, the reciprocal process, moving domain wall-induced current. The associated Onsager coefficients are expressed in terms of scattering matrices. Uncommonly, in (Ga,Mn)As, the effective…
The interaction between the propagating spin waves and the current driven motion of a transverse domain wall in magnetic nanowires is studied by micromagnetic simulations. If the speed of domain walls due to current induced spin transfer…
We investigate experimentally the effects of externally applied strain on the injection of 180$^\circ$ domain walls (DW) from a nucleation pad into magnetic nanowires, as typically used for DW-based sensors. In our study the strain,…
Spin orbit interactions are rapidly emerging as the key for enabling efficient current-controlled spintronic devices. Much work has focused on the role of spin-orbit coupling at heavy metal/ferromagnet interfaces in generating…
We have studied the magnetization reversal of CoFeB-MgO nanodots with perpendicular anisotropy for size ranging from w=400 nm to 1 {\mu}m. Contrary to previous experiments, the switching field distribution is shifted toward lower magnetic…
For viable applications, spintronic devices based e.g. on domain wall motion need to be highly reliable with stable magnetization states and highly reproducible switching pathways transforming one state to another. The existence of multiple…
Recent studies demonstrate that an individual magnetic domain wall (DW) can be trapped and reproducibly positioned within multiterminal (Ga,Mn)As microdevices. The electrical resistance obtained from such measurements is found to be…
Domain wall propagation in cylindrical nanowires with modulations of diameter is a key phenomenon to design physics-oriented devices, or a disruptive three-dimensional magnetic memory. This chapter presents a combination of analytical…
We present results of numerical calculations of domain-wall resistance in the ferromagnetic semiconductor (Ga,Mn)As. We employ Landauer-Buttiker formalism and the tight binding method. Taking into account the full valence band structure we…
Magnetic domain walls are pinned strongly by abrupt changes in magnetic anisotropy. When driven into oscillation by a spin-polarized current, locally pinned domain walls can be exploited as tunable sources of short-wavelength spin waves.…
We theoretically and experimentally analyze the pinning of a magnetic domain wall (DW) at engineered anisotropy variations in Pt/Co/Pt strips with perpendicular magnetic anisotropy. An analytical model is derived showing that a step in the…
We theoretically investigate the transfer of angular momentum between a spin superfluid and a domain wall in an exchange coupled easy-axis and easy-plane magnetic insulator system. A domain wall in the easy-axis magnet absorbs spin angular…
Ferroelectric domain walls exhibit a range of interesting electrical properties and are now widely recognized as functional two-dimensional systems for the development of next-generation nanoelectronics. A major achievement in the field was…
We show a novel magneto-resistive effect that appears in lithographically shaped, three-arm nanostructure, fabricated from ferromagnetic (Ga,Mn)As layers. The effect, related to a rearrangement of magnetic domain walls between different…
In the last decade, two revolutionary concepts in nano magnetism emerged from research for storage technologies and advanced information processing. The first suggests the use of magnetic domain walls (DWs) in ferromagnetic nanowires to…