Related papers: Current Assisted Magnetization Switching in (Ga,Mn…
Electronic transport through thin and laterally constrained domain walls in ferromagnetic nanojunctions is analyzed theoretically. The description is formulated in the basis of scattering states. The resistance of the domain wall is…
Perpendicular magnetic tunnel junctions based on MgO/CoFeB structures are of particular interest for magnetic random-access memories because of their excellent thermal stability, scaling potential, and power dissipation. However, the major…
We report a theoretical overview of the magnetic domain wall behavior under an electric current in infinitely-long nanotubes with azimuthal magnetization, combining the $1$D analytic model and micromagnetic simulations. We highlight effects…
DC current induced magnetization reversal and magnetization oscillation was observed in 500 nm large size Co90Fe10/Cu/Ni80Fe20 pillars. A perpendicular external field enhanced the coercive field separation between the reference layer…
A new mechanism different from the spin accumulation picture is proposed for the current induced magnetization switching in magnetic tunnel junctions by taking into account the effect of the electron electron interaction. We found in tunnel…
We study theoretically hole current-driven domain wall dynamics in (Ga,Mn)As. We show that the spin-orbit coupling causes significant hole reflection at the domain wall, even in the adiabatic limit when the wall is much thicker than the…
We report the results of experimental investigations of controlled domain wall (DW) pinning in a ferromagnetic nanowire (NW) by stray fields of two uniformly magnetized bistable ferromagnetic nanoparticles (NPs) placed on either side of the…
Passing current at given threshold voltages through a metal/insulator/metal sandwich structure device may change its resistive state. Such resistive switching is unique to nanoscale devices, but its underlying physical mechanism remains…
Switching of the direction of the magnetic moment in a nanomagnet is studied within a modified Slonczewski's model that permits torsional oscillations of the magnet. We show that the latter may inhibit or assist the magnetization switching,…
We show that in a magnetic nanowire with double magnetic domain walls, quantum interference results in spin-split quasistationary states localized mainly between the domain walls. Spin-flip-assisted transmission through the domain structure…
Strongly-interacting nanomagnetic arrays are crucial across an ever-growing suite of technologies. Spanning neuromorphic computing, control over superconducting vortices and reconfigurable magnonics, the utility and appeal of these arrays…
The current induced magnetization reversal in nanoscale spin valves is a potential alternative to magnetic field switching in magnetic memory devices. We show that the critical switching current can be decreased by an order of magnitude by…
The spin-orbit torque device is promising as a candidate for next generation magnetic memory, while the static in-plane field needed to induce deterministic switching is a main obstacle for its application in highly integrated circuits.…
A rapidly developing field of spintronics is based on the premise that substituting charge with spin as a carrier of information can lead to new devices with lower power consumption, non-volatility and high operational speed. Despite…
We observe magnetization dynamics induced by spin momentum transfer in the noise spectra of current perpendicular to the plane giant magnetoresistance spin valves. The dynamics are observable only for those combinations of current direction…
Spin waves are perturbations in the relative orientation of magnetic moments in a continuous magnetic system, which have been proposed as a new kind of information carrier for spin-based low power applications. For this purpose, a major…
We consider the dynamics of polarization of a single domain wall in a magnetic nanowire, which is strongly pinned by impurities. In this case the equation of motion for the polarization parameter does not include any other dynamical…
Magnetoresistance measurements in the CPP geometry have been performed on single electrodeposited Co nanowires exchange biased on one side by a sputtered amorphous GdCo layer. This geometry allows the stabilization of a single domain wall…
We generalize domain-wall dynamics to the case of translationally noninvariant ferromagnetic nanowires. The obtained equations of motion make the description of the domain-wall propagation more realistic by accounting for the variations…
We demonstrate numerically the ability to displace a magnetic domain wall by a remote spin current injection. We consider a long and narrow magnetic nanostripe with a single domain wall (DW). The spin-polarized current is injected…