Related papers: Spin tunneling through an indirect barrier
We characterize the spin injection into bilayer graphene fully encapsulated in hBN using trilayer (3L) hexagonal boron nitride (hBN) tunnel barriers. As a function of the DC bias, the differential spin injection polarization is found to…
In zero magnetic field, conductance measurements of clean one-dimensional (1D) constrictions defined in GaAs/AlGaAs heterostructures show twenty-six quantized ballistic plateaux, as well as a structure close to $0.7(2e^2/h)$. In an in-plane…
The bias dependence of spin injection in graphene lateral spin valves is systematically studied to determine the factors affecting the tunneling spin injection efficiency. Three types of junctions are investigated, including MgO and…
A spin filtering device using quantum spin interference is theoretically proposed in a GaAs/AlGaAs electron gas that has both Rashba and Dresselhaus spin-orbit couplings. The device achieves polarized electron currents by separating spin up…
The spin dependent reflection in quasi-two-dimensional electron gas from an impenetrable barrier in presence of Rashba and Dresselhaus spin-orbit coupling is analyzed in detail. It is shown that due to spin-orbit effects the reflected beam…
We investigate spin-polarized inter-band tunneling through measurement of (Ga,Mn)As based Zener tunnel diode. By placing the diode under reverse bias, electron spin polarization is transferred from the valence band of p-type (Ga,Mn)As to…
Using an advanced tight-binding approach, we estimate the anisotropy of the tunnel transmission associated with the rotation of the 5/2 spin of a single Mn atom forming an acceptor state in GaAs and located near an AlGaAs tunnel barrier.…
Spin effects in the tunneling regime of strong field ionization of hydrogenlike highly charged ions in linearly as well as circularly polarized laser fields are investigated. The impact of the polarization of a laser field on the spin…
An influence of spin-orbit interaction on the tunneling between two 2D electron layers is considered. Particular attention is addressed to the relation between the contribution of Rashba and Dresselhaus types. It is shown that without…
We study the tunability of the spin-orbit interaction in a two-dimensional electron gas with a front and a back gate electrode by monitoring the spin precession frequency of drifting electrons using time-resolved Kerr rotation. The Rashba…
A theoretical prediction of the spin-dependent electron self-energy and in-plane transport of a two-dimensional electron gas in proximity with a ferromagnetic gate is presented. The application of the predicted spin-dependent properties is…
The current-induced spin polarization and momentum-dependent spin-orbit field were measured in In$_{x}$Ga$_{1-x}$As epilayers with varying indium concentrations and silicon doping densities. Samples with higher indium concentrations and…
Electrostatic gating provides a way to obtain key functionalities in modern electronic devices and to qualitatively alter materials properties. While electrostatic description of such gating gives guidance for related doping effects,…
For a non-superconducting system, the electronic tunneling current through an insulating barrier is calculated, including interaction effects. The exact Hamiltonian of the full system is projected onto the subspaces of the "left" and…
Efficient conversion of a spin signal into an electric voltage in mainstream semiconductors is one of the grand challenges of spintronics. This process is commonly achieved via a ferromagnetic tunnel barrier where non-linear electric…
We consider spin-dependent tunneling through a gallium arsenide barrier, a material which has no inversion symmetry. We are dealing with free electrons, with one effective mass and a spin-splitting in the barrier material. When we take into…
We provide a theoretical framework for the electric field control of the electron spin in systems with diffusive electron motion. The approach is valid in the experimentally important case where both intrinsic and extrinsic spin-orbit…
The relation between tunnel magneto-resistance (TMR) and spin polarization is explored for GaMnAs/GaAlAs/GaMnAs structures where the carriers experience strong spin-orbit interactions. TMR is calculated using Landauer approach. The…
A model of coherent tunneling, which combines multi-orbital tight-binding approximation with Landauer-B\"uttiker formalism, is developed and applied to all-semiconductor heterostructures containing (Ga,Mn)As ferromagnetic layers. A…
We have confirmed the k-dependent spin splitting in wurtzite AlxGa1-xN/GaN heterostructures. Anomalous beating pattern in Shubnikov-de Haas measurements arises from the interference of Rashba and Dresselhaus spin-orbit interactions. The…