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Understanding charge transport in organic semiconductors in large electric fields is relevant to many applications. We present transport measurements in organic field-effect transistors based on poly(3-hexylthiophene) and…

Materials Science · Physics 2010-03-09 J. H. Worne , J. E. Anthony , D. Natelson

We report on fabrication and characterization of field effect transistors (FETs) on single-crystal pentacene. These FETs exhibit hole conductivity with room temperature effective mobility up to 0.30 cm2/Vs and on/off ratios up to 5*10^6. A…

Condensed Matter · Physics 2014-10-13 V. Y. Butko , X. Chi , D. V. Lang , A. P. Ramirez

We use a frequency-dependent electro-optic technique to measure the hole mobility in small molecule organic semiconductors, such as 6,13 bis(triisopropylsilylethynyl)-pentacene. Measurements are made on semiconductor films in bottom gate,…

Materials Science · Physics 2012-12-20 Emily G. Bittle , Joseph W. Brill , Joseph P. Straley

The use of SrTiO$_3$ dielectrics as high-permittivity insulator in organic thin film field effect transistors (FET) is evaluated. Field-effect transistors with sputtered SrTiO$_3$ and copper-phthalocyanine (CuPc) as semiconducting layer…

Materials Science · Physics 2015-05-27 F. Roth , M. Huth

A field-effect transistor that employs a perovskite-type SrTiO3 single crystal as the semiconducting channel is revealed to function as n-type accumulation-mode device with characteristics similar to that of organic FET's. The device was…

Strongly Correlated Electrons · Physics 2007-05-23 K. Ueno , I. H. Inoue , H. Akoh , M. Kawasaki , Y. Tokura , H. Takagi

In recent years, thin-film organic field-effect transistors (OFETs) have begun to be considered as a possible alternative to the hydrogenated amorphous silicon thin-film transistors (a-Si:H TFT's) used in active matrix flat panel displays…

We report the fabrication of back-gated field-effect transistors (FETs) using ultra-thin, mechanically exfoliated MoSe2 flakes. The MoSe2 FETs are n-type and possess a high gate modulation, with On/Off ratios larger than 106. The devices…

Mesoscale and Nanoscale Physics · Physics 2013-01-04 S. Larentis , B. Fallahazad , E. Tutuc

We have used an electro-optic technique to measure the position-dependent infrared absorption of holes injected into a thin crystal of the organic semiconductor, 6,13-bis(triisopropylsilylethynyl)-pentacene incorporated in a field-effect…

Materials Science · Physics 2015-05-18 E. G. Bittle , J. W. Brill , J. E. Anthony

We report on a healing of defects at room temperature in the organic semiconductor pentacene. This peculiar effect is a direct consequence of the weak intermolecular interaction which is characteristic of organic semiconductors. Pentacene…

Materials Science · Physics 2009-12-21 Wolfgang L. Kalb , Fabian Meier , Kurt Mattenberger , Bertram Batlogg

The influence of solubilizing substitutional groups on the electronic and optical properties of functionalized pentacene molecules and crystals have been investigated. Density functional theory is used to calculate the electronic and…

Materials Science · Physics 2013-11-15 Y. Saeed , K. Zhao , N. Singh , R. Li , J. E. Anthony , A. Amassian , U. Schwingenschlögl

We demonstrate dual-gated $p$-type field-effect transistors (FETs) based on few-layer tungsten diselenide (WSe$_2$) using high work-function platinum source/drain contacts, and a hexagonal boron nitride top-gate dielectric. A device…

Spin-polarized field-effect transistor (spin-FET), where a dielectric layer is generally employed for the electrical gating as the traditional FET, stands out as a seminal spintronic device under the miniaturization trend of electronics. It…

Materials Science · Physics 2017-03-07 Fan Li , Cheng Song , Bin Cui , Jingjing Peng , Youdi Gu , Guangyue Wang , Feng Pan

We report on fabrication of novel field-effect transistors (FETs) based on transition metal dichalcogenides. The unique structure of single crystals of these layered inorganic semiconductors enables fabrication of FETs with intrinsically…

Materials Science · Physics 2009-11-10 V. Podzorov , M. E. Gershenson , Ch. Kloc , R. Zeis , E. Bucher

An n-channel accumulation-type field effect transistor (FET) has been fabricated utilizing a KTaO3 single crystal as an active element and a sputtered amorphous Al2O3 film as a gate insulator. The device demonstrated an ON/OFF ratio of 10^4…

Strongly Correlated Electrons · Physics 2009-11-10 K. Ueno , I. H. Inoue , T. Yamada , H. Akoh , Y. Tokura , H. Takagi

Copper phthalocyanine (Cu-Pc) single crystals were grown by physical vapor transport and field effect transistors (FETs) on the surface of these crystals were prepared. These FETs function as p-channel accumulation-mode devices. Charge…

Materials Science · Physics 2009-11-10 Roswitha Zeis , Theo Siegrist , Christian Kloc

The primary mechanism of operation of almost all transistors today relies on electric-field effect in a semiconducting channel to tune its conductivity from the conducting 'on'-state to a non-conducting 'off'-state. As transistors continue…

We report on the fabrication and electrical characterization of field-effect transistors at the surface of tetracene single crystals. We find that the mobility of these transistors reaches the room-temperature value of $0.4 \ cm^2/Vs$. The…

Materials Science · Physics 2009-11-10 R. W. I. de Boer , T. M. Klapwijk , A. F. Morpurgo

We studied the influence of oxygen on the electronic trap states in a pentacene thin film. This was done by carrying out gated four-terminal measurements on thin-film transistors as a function of temperature and without ever exposing the…

Materials Science · Physics 2009-12-21 Wolfgang L. Kalb , Kurt Mattenberger , Bertram Batlogg

We report the first investigation of the photo-response of the conductivity of a new class of organic semiconductors based on functionalized pentacene. These materials form high quality single crystals that exhibit a thermally activated…

Materials Science · Physics 2009-11-07 T. Tokumoto , J. S. Brooks , R. Clinite , X. Wei , J. E. Anthony , D. L. Eaton , S. R. Parkin

We fabricate and characterize dual-gated graphene field-effect transistors (FETs) using Al2O3 as top-gate dielectric. We use a thin Al film as a nucleation layer to enable the atomic layer deposition of Al2O3. Our devices show mobility…

Mesoscale and Nanoscale Physics · Physics 2009-11-13 Seyoung Kim , Junghyo Nah , Insun Jo , Davood Shahrjerdi , Luigi Colombo , Zhen Yao , Emanuel Tutuc , Sanjay K. Banerjee
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