Related papers: Scaling issues for AlGaN/GaN HEMTs: performance op…

Field-effect transistors (FETs) with single gates are adversely affected by short channel effects such as drain-induced barrier lowering (DIBL) and increases in the magnitude of sub-threshold swing as the channel length is reduced.…

We investigate automated in situ optimization of the potential landscape in a quantum point contact device, using a $3 \times 3$ gate array patterned atop the constriction. Optimization is performed using the covariance matrix adaptation…

Beam management is central in the operation of dense 5G cellular networks. Focusing the energy radiated to mobile terminals (MTs) by increasing the number of beams per cell increases signal power and decreases interference, and has hence…

Two-dimensional (2D) materials have great potential for use in future electronics due to their atomically thin nature which withstands short channel effects and thus enables better scalability. Device scaling is the process of reducing all…

The depth distribution of the transport properties as well as the temperature dependence of the low field magneto-conductance for several c-axis oriented GaN nanowall network samples grown with different average wall-widths are…

Congestion in network occurs due to exceed in aggregate demand as compared to the accessible capacity of the resources. Network congestion will increase as network speed increases and new effective congestion control methods are needed,…

Electrostatically defined nanoscale devices on two-dimensional semiconductor heterostructures are the building blocks of various quantum electrical circuits. Owing to its atomically flat interfaces and the inherent two-dimensional nature,…

In this work, an analytical model to calculate the channel potential and current-voltage characteristics in a Symmetric tunneling Field-Effect-Transistor (SymFET) is presented. The current in a SymFET flows by tunneling from an n-type…

The possibility of optimization of high voltage hybrid SIT-MOS transistors (HSMT) by local reduction of the lifetime near anode emitter and/or reduction of the anode emitter injection ability by three different ways has been investigated…

Molecular transistors have the potential for switching with lower gate voltages than conventional field-effect transistors. We have calculated the performance of a single-molecule device in which there is interference between electron…

We theoretically investigate the propagation of heat currents in a three-terminal quantum dot engine. Electron-electron interactions introduce state-dependent processes which can be resolved by energy-dependent tunneling rates. We identify…

The development of quantum circuits based on hybrid superconductor-semiconductor Josephson junctions holds promise for exploring their mesoscopic physics and for building novel superconducting devices. The gate-tunable superconducting…

We present a scaling theory of two-dimensional (2D) field effect transistors (FETs). For devices with channel thickness less than 4 nm, the device electrostatics is dominated by the physical gate oxide thickness and not the effective oxide…

Using recently available GaN FETs, a 600 Volt three-stage, multi-FET switch has been developed having 2 nanosecond rise time driving a 200 Ohm load with the potential of approaching 30 MHz average switching rates. Possible applications…

A robust power gating design using Graphene Nano-Ribbon Field Effect Transistors (GNRFET) is proposed using 16nm technology. The Power Gating (PG) structure is composed of GNRFET as a power switch and MOS power gated module. The proposed…

Spintronics has emerged as a promising field for next-generation devices, offering functionalities beyond complementary metal-oxide-semiconductor (CMOS). A critical challenge in spintronics is to develop systems that can efficiently…

Imbalanced voltage sharing during the turn-off transient is a challenge for series-connected silicon carbide (SiC) MOSFET application. This article first discusses the influence of the gate-drain discharge deviation on the voltage imbalance…

Narrow-channel accumulated body nMOSFET devices with p-type side-gates surrounding the active area have been electrically characterized between 100 and 400 K with varied side-gate biasing (Vside). The subthreshold slope (SS) and drain…

Over the last decade, progress in wide bandgap, III-V materials systems based on gallium nitride (GaN) has been a major driver in the realization of high power and high frequency electronic devices. Since the highly conductive,…

The first inversion-mode gate-all-around (GAA) III-V MOSFETs are experimentally demonstrated with a high mobility In0.53Ga0.47As channel and atomic-layer-deposited (ALD) Al2O3/WN gate stacks by a top-down approach. A well-controlled InGaAs…