Related papers: Scaling issues for AlGaN/GaN HEMTs: performance op…
The electronic quality of two-dimensional systems is crucial when exploring quantum transport phenomena. In semiconductor heterostructures, decades of optimization have yielded record-quality two-dimensional gases with transport and quantum…
Current memcapacitor implementations typically demand complex fabrication processes or depend on organic materials exhibiting poor environmental stability and reproducibility. Here, we demonstrate memcapacitor structures utilizing a quasi…
It is well known and has been shown that the gain performance of Gaseous Electron Multipliers (GEM) depends on the size of the holes. With an optical scanner it is possible to measure the dimensions of the holes, and to predict the…
We have fabricated AlGaAs/GaAs heterostructure devices in which the conduction channel can be populated with either electrons or holes simply by changing the polarity of a gate bias. The heterostructures are entirely undoped, and carriers…
III-Nitride light emitting diodes (LEDs) are widely used in a range of high efficiency lighting and display applications, which have enabled significant energy savings in the last decade. Despite the wide application of GaN LEDs, transport…
A key requirement to perform simulations of large quantum systems on near-term quantum hardware is the design of quantum algorithms with short circuit depth that finish within the available coherence time. A way to stay within the limits of…
Ambipolar currents in Germanium p-type nanowire Schottky barrier MOSFETs were calculated fully quantum-mechanically by using the multi-band k.p method and the non-equilibrium Green's function approach. We investigated the performance of…
We fabricate a vertical spin metal-oxide-semiconductor field-effect transistor (spin-MOSFET) structure, which is composed of an epitaxial single-crystal heterostructure with a ferromagnetic-semiconductor GaMnAs source/drain, and investigate…
Electrical signaling via voltage-gated ion channels depends upon the function of the voltage sensor (VS), identified with the S1-S4 domain of voltage-gated K channels. Here we investigate some physical aspects of the sliding-helix model of…
The paradigm of graphene transistors is based on the gate modulation of the channel carrier density by means of a local channel gate. This standard architecture is subject to the scaling limit of the channel length and further restrictions…
Ninety eight one-dimensional channels defined using split gates fabricated on a GaAs/AlGaAs heterostructure are measured during one cooldown at 1.4 K. The devices are arranged in an array on a single chip, and individually addressed using a…
Mid-circuit measurements and measurement-controlled gates are supported by an increasing number of quantum hardware platforms and will become more relevant as an essential building block for quantum error correction. However, mid-circuit…
We investigate the atomic and electronic structures of cyclooctatetraene (COT) molecules on graphene and analyze their dependence on external gate voltage using first-principles calculations. The external gate voltage is simulated by adding…
We investigate High-harmonic generation (HHG) in a dimerized Kitaev chain. The dimerization in the model is introduced through a site-dependent modulating potential, determined by a parameter $\lambda \in [-1:1]$. This parameter also…
Quantum systems in contact with an environment display a rich physics emerging from the interplay between dissipative and Hamiltonian terms. Here we focus on the role of the geometry of the coupling between the system and the baths. In the…
We investigate high-mobility two-dimensional electron gases in AlGaAs heterostructures by employing Schottky-gate-dependent measurements of the samples' electron density and mobility. Surprisingly, we find that two different sample…
Mechanical transfer of high performing thin film devices onto arbitrary substrates represents an exciting opportunity to improve device performance, explore non-traditional manufacturing approaches, and paves the way for soft, conformal,…
In this work, single-layer intrinsic and fluorinated graphene were investigated as gate insertion layers in normally-OFF p-GaN gate HEMTs, which wraps around the bottom of the gate forming Ti/graphene/p-GaN at the bottom and Ti/graphene/…
Self-heating is a severe problem for high-power GaN electronic and optoelectronic devices. Various thermal management solutions, e.g. flip-chip bonding or composite substrates have been attempted. However, temperature rise still limits…
We demonstrate that branching of the electron flow in semiconductor nanostructures can strongly affect macroscopic transport quantities and can significantly change their dependence on external parameters compared to the ideal ballistic…