Related papers: Superconductivity in silicon nanostructures
We present the findings of the superconductivity in the silicon nanostructures prepared by short time diffusion of boron after preliminary oxidation of the n-type Si (100) surface. These Si-based nanostructures represent the p-type high…
We present the findings of the superconductivity in the silicon nanostructures prepared by short time diffusion of boron of the n - type Si (100) surface. These Si - based nanostructures represent the p - type ultra-narrow self - assembled…
We present the findings of the studies of the silicon sandwich nanostructure that represents the high mobility ultra - narrow silicon quantum well of the p - type (Si - QW), 2 nm, confined by the delta - barriers, 3 nm, heavily doped with…
We present the first findings of the circularly polarized electroluminescence (CPEL) from silicon nanostructures which are the p-type ultra-narrow silicon quantum well (Si-QW) confined by {\delta}-barriers heavily doped with boron. The CPEL…
We present ultra-shallow diffusion profiles performed by short-time diffusion of boron from the gas phase using controlled surface injection of self-interstitials and vacancies into the n-type Si(100) wafers. The diffusion profiles of this…
The circularly polarized electroluminescence (CPEL) from silicon nanostructures which are the p-type ultra-narrow silicon quantum well (Si-QW) confined by {\delta}-barriers heavily doped with boron, 5 10^21 cm^-3, is under study as a…
We present the experimental data of the electric features of the silicon nanosandwichstructures obtained by silicon planar technology in the frameworks of the Hall geometry that represent the ultra-shallow silicon quantum well of 2 nm wide…
Porous silicon, obtained by electrochemical etching, has been used as a substrate for the growth of nanoperforated Nb thin films. The films, deposited by UHV magnetron sputtering on the porous Si substrates, inherited their structure made…
We report on the transport properties of nanostructures made from boron-doped superconducting diamond. Starting from nanocrystalline superconducting boron-doped diamond thin films, grown by Chemical Vapor Deposition, we pattern by…
Nanoscale silicon p(+)-n junctions with very high concentration of boron, 5 10^21 cm-3, are found to demonstrate interesting optical properties. Emission band dominated in near-infrared electroluminescence (EL) spectra possesses high degree…
We present superconducting monocrystalline Silicon On Insulator thin 33 nm epilayers. They are obtained by nanosecond laser annealing under ultra-high vacuum on 300 mm wafers heavily pre-implantated with boron ($2.5\times \,10^{16}\,…
Scanning tunneling spectroscopies in the subKelvin temperature range were performed on superconducting Silicon epilayers doped with Boron in the atomic percent range. The resulting local differential conductance behaved as expected for a…
We have investigated electrical transport in a diffusive multiwalled carbon nanotube contacted using superconducting leads made of Al/Ti sandwich structure. We find proximity-induced superconductivity with measured critical currents up to…
By using the five Angstrom diameter pores of calcined zeolite as the template, we have fabricated boron doped carbon nanotube networks via the chemical vapor deposition method. Raman data indicate the network to comprise segments of…
The negative-U impurity stripes confining the edge channels of semiconductor quantum wells are shown to allow the effective cooling inside in the process of the spin-dependent transport. The aforesaid promotes also the creation of composite…
We have produced Sn/Si core-shell cluster assemblies by a plasma-gas-condensation cluster beam deposition apparatus. For the sample with Si content = 12 at.%, the temperature dependence of electrical resistivity exhibits a metallic behavior…
The performance of superconducting quantum circuits is primarily limited by dielectric loss due to interactions with two-level systems (TLS). State-of-the-art circuits with engineered material interfaces are approaching a limit where…
Low dimensional semiconducting structures with strong spin-orbit interaction (SOI) and induced superconductivity attracted much interest in the search for topological superconductors. Both the strong SOI and hard superconducting gap are…
We present results of electrochemical deposition of superconducting Pb in the pores of templates prepared by self-assembly from colloidal suspensions of polystyrene latex spheres. This technique enables us to create highly ordered…
Hydrogen resist lithography using the tip of a scanning tunneling microscope (STM) is employed for patterning p-type nanostructures in silicon. For this, the carrier density and mobility of boron $\delta$-layers, fabricated by gas-phase…