We present ultra-shallow diffusion profiles performed by short-time diffusion of boron from the gas phase using controlled surface injection of self-interstitials and vacancies into the n-type Si(100) wafers. The diffusion profiles of this art are found to consist of both longitudinal and lateral silicon quantum wells of the p-type that are self-assembled between the alloys of microdefects, which are produced by previous oxidation. These alloys appear to be passivated during short-time diffusion of boron thereby forming neutral del'ta barriers. The fractal type self-assembly of microdefects is found to be created by varying the thickness of the oxide overlayer, which causes the system of microcavities embedded in the quantum well plane.
@article{arxiv.cond-mat/0407722,
title = {Fractal Self-Assembled Nanostructures on Monocrystalline Silicon Surface},
author = {N. T. Bagraev and A. D. Bouravleuv and W. Gehlhoff and L. E. Klyachkin and A. M. Malyarenko and V. V. Romanov and S. A. Rykov},
journal= {arXiv preprint arXiv:cond-mat/0407722},
year = {2007}
}