Modeling of ion-implanted boron redistribution in silicon crystals during low-temperature annealing with a small thermal budget has been carried out. It was shown that formation of "tails"' in the low-concentration region of impurity profiles occurs due to the long-range migration of boron interstitials
@article{arxiv.1207.3512,
title = {Simulation of boron diffusion during low-temperature annealing of implanted silicon},
author = {O. I. Velichko and A. P. Kavaliova},
journal= {arXiv preprint arXiv:1207.3512},
year = {2015}
}