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Interstitial diffusion of ion-implanted boron in crystalline silicon

Materials Science 2012-07-04 v1 Mathematical Physics math.MP
Authors: O. I. Velichko , A. P. Kavaliova
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Abstract

Modeling of the long-range migration of boron interstitials during low temperature annealing of ion-implanted silicon crystals has been carried out.

Keywords

radiation damage in silicon

Cite

@article{arxiv.1207.0794,
  title  = {Interstitial diffusion of ion-implanted boron in crystalline silicon},
  author = {O. I. Velichko and A. P. Kavaliova},
  journal= {arXiv preprint arXiv:1207.0794},
  year   = {2012}
}

Comments

4 pages, 2 figures

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