Related papers: Superconductivity in silicon nanostructures
We study theoretically the effect of the fermion and boson densities on the superconductivity transition critical temperature $(T_c)$ of a two dimensional electron gas (2DEG), where superconductivity is mediated by a Bose-Einstein…
We present the findings of the spin-dependent transport of the 2D holes in the p-type ultra-narrow self-assembled silicon quantum well (Si-QW) confined by the superconductor barriers on the n-type Si (100) surface. The Aharonov-Casher…
We report the realization of multilayer three-dimensional nanobridge Josephson junctions based on Nb/NbN and Nb/TiN superconducting stacks fabricated using electron-beam lithography and chlorine-based dry etching. In this architecture, a…
The atomic and electronic structure of a set of proposed thin (1.6 nm in diameter) silicon/silica quantum nanodots and nanowires with narrow interface, as well as parent metastable silicon structures (1.2 nm in diameter), was studied in…
Adsorption of 1/3 monolayer of Sn on a heavily-doped p-type Si(111) substrate results in the formation of a hole-doped Mott insulator, with electronic properties that are remarkably similar to those of the high-Tc copper oxide compounds. In…
We present a first-principles study of semiconducting carbon nanotubes adsorbed on the unpassivated Si(100) surface. We have found metallicity for the combined system caused by n-doping of the silicon slab representing the surface by the…
Adsorption of one-third monolayer of Sn on an atomically-clean Si(111) substrate produces a two-dimensional triangular adatom lattice with one unpaired electron per site. This dilute adatom reconstruction is an antiferromagnetic Mott…
Superconductivity was recently observed in boron-doped ($\sqrt{3}\times\sqrt{3}$)Sn/Si(111). The material can be described by an extended Hubbard model on a triangular lattice. Here, we use the random-phase approximation to investigate the…
Structural, magnetic, and superconducting properties of S/F bilayers Nb/Cu40Ni60 deposited on silicon substrate have been characterized using Polarized Neutron Reflectometry and complementary techniques. The study allowed to determine real…
We report high-pressure induced superconductivity in boron nanowires (BNWs) with rhombohedral crystal structure. Obviously different from bulk rhombohedral boron, these BNWs show a semiconductor-metal transition at much lower pressure than…
The negative-U impurity stripes confining the edge channels of semiconductor quantum wells are shown to allow the effective cooling inside in the process of the spin-dependent transport, with the reduction of the electron-electron…
The comment to article "Coexistence of Diamagnetism and Vanishingly Small Electrical Resistance at Ambient Temperature and Pressure in Nanostructures" shows the role of local electron pairing and Bose-Einstein-Condensation of pairs for…
Superconducting boron doped silicon is a promising material for integrated silicon quantum devices. In particular, its low electronic density and moderate disorder make it a suitable candidate for the fabrication of large inductances with…
The development of a materials platform that exhibits both superconducting and semiconducting properties is an important endeavour for a range of emerging quantum technologies. We investigate the formation of superconductivity in nanowires…
We show a hard induced superconducting gap in a Ge-Si nanowire Josephson transistor up to in-plane magnetic fields of $250$ mT, an important step towards creating and detecting Majorana zero modes in this system. A hard induced gap requires…
The recent discovery of high temperature superconductivity in nickelate systems has generated tremendous interests in the field of superconductivity. The core issue to understand the superconductivity mechanism is about the superconducting…
The layered ternary sp conductor NaAlSi, possessing the iron-pnictide "111" crystal structure, superconducts at 7 K. Using density functional methods, we show that this compound is an intrinsic (self-doped) low-carrier-density semimetal…
We have studied a Superconducting Quantum Interference SQUID device made from a single layer thin film of superconducting silicon. The superconducting layer is obtained by heavily doping a silicon wafer with boron atoms using the Gas…
We fabricated reproducible high transparency superconducting contacts consisting of superconducting Ti/Al/Ti trilayers to gated single-walled carbon nanotubes (SWCNTs). The reported semiconducting SWCNT have normal state differential…
Polycrystalline samples of layered pnictogen diselenide NdO0.8F0.2Sb1-xBixSe2 (x = 0 to 0.8) were successfully synthesized by solid-state reactions. Electrical resistivity in the synthesized samples was systematically decreased with an…