We have studied a Superconducting Quantum Interference SQUID device made from a single layer thin film of superconducting silicon. The superconducting layer is obtained by heavily doping a silicon wafer with boron atoms using the Gas Immersion Laser Doping (GILD) technique. The SQUID device is composed of two nano-bridges (Dayem bridges) in a loop and shows magnetic flux modulation at low temperature and low magnetic field. The overall behavior shows very good agreement with numerical simulations based on the Ginzburg-Landau equations.
@article{arxiv.1508.04075,
title = {Silicon Superconducting Quantum Interference Device},
author = {Jean-Eudes Duvauchelle and Anaïs Francheteau and Christophe Marcenat and Francesca Chiodi and Dominique Débarre and Klaus Hasselbach and John R. Kirtley and François Lefloch},
journal= {arXiv preprint arXiv:1508.04075},
year = {2015}
}
Comments
Published in Applied Physics Letters (August 2015)