Related papers: Planar Hall Effect MRAM
Transport measurements on thin films of the prototypical altermagnet MnTe have reported conflicting phenomena of anomalous Hall effects (AHE), including opposite signs and thickness-independent resistivity. Here we resolve these…
We show that the Anomalous Hall Effect (AHE) observed in Colossal Magnetoresistance Manganites is a manifestation of Berry phase effects caused by carrier hopping in a non-trivial spin background. We determine the magnitude and temperature…
Using a multi-conduction-channel model, we redefined the micromechanism of spin Hall magnetoresistance (SMR). Four conduction channels are created by spin accumulation of nonpolarized electron flow at top, bottom, left and right interfaces…
We propose a new type of magnetoelectric memory device that stores magnetic easy-axis information or pseudo-magnetization, rather than a definite magnetization direction, in piezoelectric/ferromagnetic (PE/FM) heterostructures.…
A series of Mn$_{100-x}$Rh$_x$ ($20 \le x \le 50$) thin films were epitaxially grown on the MgO substrate using magnetron sputtering technique, and were systematically investigated by magnetization, longitudinal electrical resistivity, and…
The authors proposed and computationally analyzed nonvolatile static random access memory (NV-SRAM) architecture using metal-oxide-semiconductor field-effect transistor (MOSFET) type of spin-transistors referred to as pseudo-spin-MOSFET…
We propose an optical means to realize a spin hall effect (SHE) in neutral atomic system by coupling the internal spin states of atoms to radiation. The interaction between the external optical fields and the atoms creates effective…
The layer Hall effect is an intriguing phenomenon observed in magnetic topological layered materials, where the Hall response arises from the opposite deflection of electrons on top and bottom layers. To realize layer Hall effect,…
Spin Hall effect (SHE) induced reversal of perpendicular magnetization has attracted significant interest, due to its potential to lead to low power memory and logic devices. However, the switching requires an assisted in-plane magnetic…
We study theoretically the parallel quantum wires of the experiment by Auslaender et al. [Science 308, 88 (2005)] at low electron density. It is shown that a Hall effect as observed in two- or three-dimensional electron systems develops as…
While altermagnetic materials are characterized by a vanishing net magnetic moment, their symmetry in principle allows for the existence of an anomalous Hall effect (AHE). Here we introduce a model with altermagnetism in which the emergence…
Magnetoresistance (MR) provides a crucial tool for experimentally studying spin torques. While MR is well established in the device geometry of the spin Hall effect (SHE), as exemplified by the magnet/heavy-metal heterostructures, its role…
Analog electronic non-volatile memories mimicking synaptic operations are being explored for the implementation of neuromorphic computing systems. Compound synapses consisting of ensembles of stochastic binary elements are alternatives to…
We study the anomalous Hall-like effect (AHLE) and the effective anisotropic magnetoresistance (EAMR) in antiferromagnetic {\gamma} -IrMn3/Y3Fe5O12(YIG) and Pt/YIG heterostructures. For {\gamma} -IrMn3/YIG, the EAMR and the AHLE resistivity…
The planar topological Hall effect (PTHE), appeared when the magnetic field tended to be along the current, is believed to result from the real-space Berry curvature of the spin spiral structure and has been experimentally observed in…
The anomalous Hall effect (AHE) is a well-known fundamental property of ferromagnetic metals, commonly associated with the presence of a net magnetization. Recently, an AHE has been discovered in non-collinear antiferromagnetic (AFM)…
We investigate the planar Hall effect (PHE) in two-dimensional (2D) superconductors with spin-orbit interactions, where transport anisotropy is induced by an in-plane magnetic field. While PHE typically arises from the breaking of basal…
We report on the first example of epitaxial Mn$_{3 + \delta}$Ge thin films with a cubic $L1_2$ structure. The films are found to exhibit frustrated ferromagnetism with an average magnetization corresponding to 0.98$~\pm~$0.06$~\mu_B$/Mn,…
The quantized version of the anomalous Hall effect has been predicted to occur in magnetic topological insulators, but the experimental realization has been challenging. Here, we report the observation of the quantum anomalous Hall (QAH)…
Naturally random devices that exploit ambient thermal noise have recently attracted attention as hardware primitives for accelerating probabilistic computing applications. One such approach is to use a low barrier nanomagnet as the free…