Related papers: Planar Hall Effect MRAM
The ordinary Hall effect is driven by the Lorentz force, while its anomalous counterpart occurs in ferromagnets. Here we show that the Berry curvature monopole of non-magnetic 2D spin-3/2 holes leads to a novel Hall effect linear in an…
Phenomenology similar to the nonreciprocal charge transport violating Onsagers reciprocity relations can develop in directionally inhomogeneous conducting films with nonuniform Hall coefficient along the current trajectory. The effect is…
Spin Hall Effect is relativistic quantum mechanical effect which enables non-magnetic materials show magnetic phenomena without the application of a magnetic field. With spin Hall Effect, one can realize spintronics devices operating purely…
Quantum anomalous Hall effect (QAH) is induced by substitution of a certain portion, x, of Bi atoms in a BiTe-based insulating parent compound by magnetic ions (Cr or V). We find the density of in-gap states, N(E), emerging as a result of…
We resolve the breakdown of angular momentum conservation on two-dimensional photon tunneling by considering spin Hall effect (SHE) of light. This interesting effect manifests itself as polarization-dependent transverse shifts for a classic…
Spin-orbit torque (SOT) based magnetic random access memory (MRAM) is envisioned as an emerging non-volatile memory due to its ultra-high speed and low power consumption. The field-free switching schema in SOT devices is of great interest…
Magnetotransport properties of spin-glass-like Ge/1-x-y/Sn/x/Mn/y/Te mixed crystals with chemical composition changing in the range of 0.083 < x < 0.142 and 0.012 < y < 0.119 are presented. The observed negative magnetoresistance we…
The quantum Hall effect (QHE) originates from discrete Landau levels forming in a two-dimensional (2D) electron system in a magnetic field. In three dimensions (3D), the QHE is forbidden because the third dimension spreads Landau levels…
Recent studies have shown that certain antiferromagnetic (AFM) materials with the same symmetry breaking as ferromagnets can generate sufficiently large ferromagnetic (FM) responses. Here, we report that the new AFM material NbMnAs exhibits…
In two-dimensional materials where interacting Fermi pockets occur in valleys related by time-reversal symmetry, a spontaneous valley imbalance results in a novel state known as an orbital magnet. Due to the breaking of time-reversal…
Arrays of atoms trapped in optical lattices are appealing as storage media for photons, since motional dephasing of the atoms is eliminated. The regular lattice is also associated with band structure in the dispersion experienced by…
A prominent feature of topological insulators (TIs) is the surface states comprising of spin-nondegenerate massless Dirac fermions. Recent technical advances have made it possible to address the surface transport properties of TI thin films…
The orbital Hall effect (OHE), resulting from non-trivial quantum geometry of 2D materials, has several potential advantages over the spin Hall effect (SHE), the latter being well known for its many applications in spintronics. Like the…
The orbital Hall effect (OHE) is attracting recent interest due to its fundamental science implications and potential applications in orbitronics and spintronics. Unlike the spin Hall effect, the connection between the OHE and band topology…
We measure the low-frequency thermal fluctuations of pure spin current in a Platinum film deposited on yttrium iron garnet via the inverse spin Hall effect (ISHE)-mediated voltage noise as a function of the angle $\alpha$ between the…
We show that a sharp dependence of the Hall coefficient $R$ on the magnetic field $B$ arises in two-dimensional electron systems with randomly located strong scatterers. The phenomenon is due to classical memory effects. We calculate…
Interest in magnetic-tunnel junctions has prompted a re-examination of tunneling measurements through thin insulating films. In any study of metal-insulator-metal trilayers, one tries to eliminate the possibility of pinholes (small areas…
For over a century, the Hall effect, a transverse effect under out-of-plane magnetic field or magnetization, has been a cornerstone for magnetotransport studies and applications. Modern theoretical formulation based on the Berry curvature…
The quantum Hall (QH) effect, quantized Hall resistance combined with zero longitudinal resistance, is the characteristic experimental fingerprint of Chern insulators - topologically non-trivial states of two-dimensional matter with broken…
We studied the angular dependence of anisotropic magnetoresistance (AMR) and Planar Hall effect (PHE) at various temperatures in high quality epitaxial Fe3O4 films grown on MgO(001) substrates. The PHE contains only a twofold angular…