Related papers: Single-Electron Transistor in Strained Si/SiGe Het…

We use the tip of an atomic force microscope (AFM) to charge floating metallic gates defined on the surface of a Si/SiGe heterostructure. The AFM tip serves as an ideal and movable cryogenic switch, allowing us to bias a floating gate to a…

Excitons are promising candidates for generating superfluidity and Bose-Einstein Condensation (BEC) in solid state devices, but an enabling material platform with in-built bandstructure advantages and scaling compatibility with industrial…

Electron tunneling through a system formed by two coupled quantum dots in a parallel geometry is considered within a generalized Anderson model. The dots are assumed to have nearly equal radii but different (and tunable) gate voltages. In…

Ground-state properties of a double-large-dot sample connected to a reservoir via a single-mode point contact are investigated. When the interdot transmission is perfect and the dots controlled by the same dimensionless gate voltage, we…

Field-effect transistors (FETs) with single gates are adversely affected by short channel effects such as drain-induced barrier lowering (DIBL) and increases in the magnitude of sub-threshold swing as the channel length is reduced.…

We have incorporated an aluminum single electron transistor directly into the defining gate structure of a semiconductor quantum dot, permitting precise measurement of the charge in the dot. Voltage biasing a gate draws charge from a…

An electron-phonon cavity consisting of a quantum dot embedded in a free-standing GaAs/AlGaAs membrane is characterized in Coulomb blockade measurements at low temperatures. We find a complete suppression of single electron tunneling around…

We report the electrical top-gating of a 2-dimensional electron gas (2DEG) formed at the LaAlO3/SrTiO3 interface, using electron-beam evaporated Au gate electrodes. In these structures, epitaxial LaAlO3 films grown by pulsed laser…

Even as today's most prominent spin-based qubit technologies are maturing in terms of capability and sophistication, there is growing interest in exploring alternate material platforms that may provide advantages, such as enhanced qubit…

With the help of the spin-orbit interaction, we propose a scheme to perform holonomic single qubit gates on the electron spin confined to a quantum dot. The manipulation is done in the absence (or presence) of an applied magnetic field. By…

Semiconductor devices continue to press into the nanoscale regime, and new applications have emerged for which the quantum properties of dopant atoms act as the functional part of the device, underscoring the necessity to probe the quantum…

One-dimensional electron systems (1DESs) exhibit properties that are fundamentally different from higher-dimensional systems. For example, electron-electron interactions in 1DESs have been predicted to induce Tomonaga-Luttinger liquid…

The electron transport in the two-dimensional gas formed in tensile-strained Si1-xGex/Si/Si1-xGex heterostructures is investigated using Monte Carlo simulation. At first the electron mobility is studied in ungated modulation doped…

Here, we employ a numerical approach to investigate the transport and conductance characteristics of a quantum point contact. A quantum point contact is a narrow constriction of a width comparable to the electron wavelength defined in a…

Topological electronic phases exist in a variety of naturally occurring materials but can also be created artificially. We used a cryogenic scanning tunneling microscope to create dimerized chains of identical quantum dots on a…

We propose a new physical implementation of spin qubits for quantum information processing, namely defect states in antidot lattices defined in the two-dimensional electron gas at a semiconductor heterostructure. Calculations of the band…

We study the electronic and optical properties of laterally coupled InGaAs/GaAs quantum dot molecules under lateral electric field. We find that electrons perceive the double-dot structure as a compound single object, while the holes…

We have observed thermal gating, i.e. electrostatic gating induced by hot electrons. The effect occurs in a device consisting of two capacitively coupled quantum dots. The double dot system is coupled to a hot electron reservoir on one side…

Quantum confinement has made it possible to detect and manipulate single-electron charge and spin states. The recent focus on two-dimensional (2D) materials has attracted significant interests on possible applications to quantum devices,…

The low temperature electrical behavior of adjacent silicide/Si Schottky contacts with or without dopant segregation is investigated. The electrical characteristics are very well modeled by thermionic-field emission for non-segregated…