Related papers: Tunable effective g-factor in InAs nanowire quantu…
It is known experimentally that at not very large filling factors $\nu$ the quantum Hall conductivity peaks corresponding to the same Landau level number $N$ and two different spin orientations are well separated. These peaks occur at…
We report measurements on a silicon nanowire quantum dot with a clarity that allows for a complete understanding of the spin states of the first four holes. First, we show control of the hole number down to one. Detailed measurements at…
We have studied the behavior of the electronic energy spin-splitting of InGaAs-InAlAs based double quantum wells (narrow gap structures) under in-plane magnetic and transverse electric fields. We have developed an improved 8x8 version of…
We evaluate the Lande g factor of electrons in quantum dots (QDs) fabricated from GaAs quantum well (QW) structures of different well width. We first determine the Lande electron g factor of the QWs through resistive detection of electron…
To generate entangled photon pairs via quantum dots (QDs), the exciton fine structure splitting (FSS) must be comparable to the exciton homogeneous line width. Yet in the (In,Ga)As/GaAs QD, the intrinsic FSS is about a few tens $\mu$eV. To…
We study the spin states of a few-electron quantum dot defined in a two-dimensional electron gas, by applying a large in-plane magnetic field. We observe the Zeeman splitting of the two-electron spin triplet states. Also, the one-electron…
We report the optical spectroscopic results of a single self-assembled InAlAs/Al GaAs quantum dot. The polarization-dependent shift of the Zeeman splitting in a single InAlAs QD has been observed. The induced Overhauser field is estimated…
We present low temperature transport measurements on double quantum dots in InAs nanowires grown by metal-organic vapor phase epitaxy. Two dots in series are created by lithographically defined top-gates with a procedure involving no extra…
We present self-assembly of InAs/InAlAs quantum dots by droplet epitaxy technique on vicinal GaAs(111)A substrates. The small miscut angle, while maintaining the symmetries imposed to the quantum dot from the surface, allows fast growth…
We have developed a theory of the longitudinal $g$ factor of light holes in semiconductor quantum wells. It is shown that the absolute value of the light-hole $g$-factor can strongly exceed its value in the bulk and, moreover, the…
We investigate the spin properties of InAs/InGaAs/InP quantum dots grown by metalorganic vapor-phase epitaxy (MOVPE) deposition using droplet epitaxy, which emit in the telecom C-band. Using pump-probe Faraday ellipticity measurements, we…
The electron and hole g factors are the key quantities for the spin manipulations in semiconductor quantum nanostructures. However, for the individual nanostructures, the separate determination including the signs of those g factors is…
We present measurements on gate-defined double quantum dots in Ge-Si core-shell nanowires, which we tune to a regime with visible shell filling in both dots. We observe a Pauli spin blockade and can assign the measured leakage current at…
We use electric dipole spin resonance to measure dynamic nuclear polarization in InAs nanowire quantum dots. The resonance shifts in frequency when the system transitions between metastable high and low current states, indicating the…
We perform transport measurements on double quantum dots defined in Ge/Si core/shell nanowires and focus on Pauli spin blockade in the regime where tens of holes occupy each dot. We identify spin blockade through the magnetic field…
We investigated electron transport through ultra small Si quantum dots. We found that the $B$-dependence of energy levels is dominated by the Zeeman shift, allowing us to measure the spin difference between two successive ground states…
We present a detailed investigation of different excitonic states weakly confined in single GaAs/AlGaAs quantum dots obtained by the Al droplet-etching method. For our analysis we make use of temperature-, polarization- and magnetic…
Self-assembled InGaAs/GaAs quantum dots (QDs) are of particular importance for the deterministic generation of spin-photon entanglement. One promising scheme relies on the Larmor precession of a spin in a transverse magnetic field, which is…
We study the Zeeman splitting in lateral quantum dots that are defined in GaAs-AlGaAs het- erostructures by means of split gates. We demonstrate a non-linear dependence of the splitting on magnetic field and its substantial variations from…
Single holes confined in semiconductor quantum dots are a promising platform for spin qubit technology, due to the electrical tunability of the $g$-factor of holes. However, the underlying mechanisms that enable electric spin control remain…