Related papers: Spin transference and magnetoresistance amplificat…
We have developed a self-aligned, high-yield process to fabricate CPP (current perpendicular to the plane) magnetic sensors of sub 100 nm dimensions. A pinned synthetic antiferromagnet (SAF) is used as the reference layer which minimizes…
We reconsider the theory of magnetoresistance in hopping semiconductors. First, we have shown that the random potential of the background impurities affects significantly preexponential factor of the tunneling amplitude which becomes to be…
We show that the accumulation of spin-polarized electrons at a forward-biased Schottky tunnel barrier between Fe and n-GaAs can be detected electrically. The spin accumulation leads to an additional voltage drop across the barrier that is…
The Edelstein effect occurring in systems with broken inversion symmetry generates a spin polarization when an electric field is applied, which is most advantageous in spintronics applications. Unfortunately, it became apparent that this…
The spin-dependent transport of the electrons tunneling through a resonant tunneling structure with ferromagnetic multi-terminal under dc and ac fields is explored by means of the nonequilibrium Green function technique. A general…
A spin version of transistor, where magnetism is used to influence electrical behaviors of the semiconductor, has been a long-pursued device concept in spintronics. In this work, we experimentally study a field-effect transistor with CrSBr,…
A theory of spin-dependent electron transmission through resonant tunneling diode (RTD) grown of non-centrosymmetrical semiconductor compounds has been presented. It has been shown that RTD can be employed for injection and detection of…
We study spin transport in forward and reverse biased junctions between a ferromagnetic metal and a degenerate semiconductor with a delta-doped layer near the interface at relatively low temperatures. We show that spin polarization of…
Using the example of a pressed sample consisting of chromium dioxide nanoparticles coated with insulating shells, we study the relationship between the electronic transport system and magnetic subsystem in granular spin-polarized metals. It…
We summarize our recent findings on how current-driven magnetization switching and magnetoresistance in nanofabricated magnetic multilayers are affected by varying the spin-scattering properties of the non-magnetic spacers, the relative…
In recent years, electrical spin injection and detection has grown into a lively area of research in the field of spintronics. Spin injection into a paramagnetic material is usually achieved by means of a ferromagnetic source, whereas the…
Spin-dependent electronic transport in magnetic double-island devices is considered theoretically in the sequential tunneling regime. Electric current and tunnel magnetoresistance are analyzed as a function of the bias voltage and spin…
This paper describes a numerical experiment of magnetization switching driven by spin-polarized current in high-TMR magnetic tunnel junctions (TMR>100%). Differently from other works, the current density distribution throughout the…
Magnetization switching provoked by spin-injection is studied in Ni nanowires of various size and morphology. The response of the magnetization to the spin-injection is studied as a function of the amplitude of the current, the temperature,…
A quantum thermal device based on three nearest-neighbor coupled spin-1/2 systems controlled by the magnetic field is proposed. We systematically study the steady-state thermal behaviors of the system. When the two terminals of our system…
We consider a microscopic theory for the spin Hall magnetoresistance (SMR). We generally formulate a spin conductance at an interface between a normal metal and a magnetic insulator in terms of spin susceptibilities. We reveal that SMR is…
A theory of spin polarized tunneling spectroscopy based on a scattering theory is given for tunneling junctions between ferromagnets and d-wave superconductors. The spin filtering effect of an exchange field in the insulator is also…
We investigate theoretically electrical spin injection at a Schottky contact between a spin-polarized electrode and a non-magnetic semiconductor. Current and electron density spin-polarizations are discussed as functions of barrier energy…
Electric-field control of spin-dependent properties has become one of the most attractive phenomena in modern materials research due the promise of new device functionalities. One of the paradigms in this approach is to electrically toggle…
It has been shown that tunneling of spin-polarized electrons through a semiconductor barrier is accompanied by generation of an electric current in the plane of the interfaces. The direction of this interface current is determined by the…