Related papers: Controlled single electron transfer between Si:P d…

We present a novel technique for the manipulation of the energy spectrum of hard-wall InAs/InP nanowire quantum dots. By using two local gate electrodes, we induce a strong electric dipole moment on the dot and demonstrate the controlled…

Despite the importance of Si:P delta-doped wires for modern nanoelectronics, there are currently no computational models of electron transport in these devices. In this paper we present a nonequilibrium Green's function model for electronic…

We report highly tunable control of holes in Ge/Si core/shell nanowires (NWs). We demonstrate the ability to create single quantum dots (QDs) of various sizes, with low hole occupation numbers and clearly observable excited states. For the…

Coherent single-electron control in a realistic semiconductor double quantum dot is studied theoretically. Using optimal-control theory we show that the energy spectrum of a two-dimensional double quantum dot has a fully controllable…

We present an electrophoretic platform based on 3D hollow nanoelectrodes capable of controlling and quantifying the intracellular delivery of single nanoparticles in single selected cells by surface-enhanced Raman spectroscopy (SERS). The…

The double carrier transport has been observed in thin film black phosphorus (BP) field effect transistor (FET) devices in highly electron doped region. BP thin films with typical thickness of 15 nm were encapsulated by hexagonal boron…

A few-electron double quantum dot was fabricated using metal-oxide-semiconductor(MOS)-compatible technology and low-temperature transport measurements were performed to study the energy spectrum of the device. The double dot structure is…

We report an experimental technique to measure and manipulate the arrival-time and energy distributions of electrons emitted from a semiconductor electron pump, operated as both a single-electron source and a two-electron source. Using an…

The precise positioning of dopant atoms within bulk crystal lattices could enable novel applications in areas including solid-state sensing and quantum computation. Established scanning probe techniques are capable tools for the…

We report the realization of a quadruple quantum dot device in a square-like configuration where a single electron can be transferred on a closed path free of other electrons. By studying the stability diagrams of this system, we…

The ability to apply GHz frequencies to control the quantum state of a single $P$ atom is an essential requirement for the fast gate pulsing needed for qubit control in donor based silicon quantum computation. Here we demonstrate this with…

We investigated electron transport through ultra small Si quantum dots. We found that the $B$-dependence of energy levels is dominated by the Zeeman shift, allowing us to measure the spin difference between two successive ground states…

We present a systematic and realistic simulation for single and double phosphorous donors in a silicon-based quantum computer design. A two-valley equation is developed to describe the ground state of phosphorous donors in strained silicon…

We demonstrate sensitive detection of single charges using a planar tunnel junction 8.5nm wide and 17.2nm long defined by an atomically precise phosphorus doping profile in silicon. The conductance of the junction responds to a nearby gate…

Electron counting of a single porphyrin molecule between two electrodes shows a crossover from sub- to super-Poissonian statistics as the bias voltage is scanned. This is attributed to the simultaneous activation of states with electron…

The spins of atoms and atom-like systems are among the most coherent objects in which to store quantum information. However, the need to address them using oscillating magnetic fields hinders their integration with quantum electronic…

One consequence of the continued downwards scaling of transistors is the reliance on only a few discrete atoms to dope the channel, and random fluctuations of the number of these dopants is already a major issue in the microelectonics…

We demonstrate a method which can hyperpolarize both the electron and nuclear spins of 31P donors in Si at low field, where both would be essentially unpolarized in equilibrium. It is based on the selective ionization of donors in a…

Two-dimensional dilute magnetic semiconductors can provide fundamental insights in the very nature of magnetic orders and their manipulation through electron and hole doping. Despite the fundamental physics, due to the large charge density…

We demonstrate an efficient control of $^{29}$Si nuclear spin orientation for specific lattice sites near $^{31}$P donors in silicon crystals at temperatures below 1 K and in high magnetic field of 4.6 T. Excitation of the forbidden…