Electronic transport in Si:P delta-doped wires
Abstract
Despite the importance of Si:P delta-doped wires for modern nanoelectronics, there are currently no computational models of electron transport in these devices. In this paper we present a nonequilibrium Green's function model for electronic transport in a delta-doped wire, which is described by a tight-binding Hamiltonian matrix within a single-band effective-mass approximation. We use this transport model to calculate the current-voltage characteristics of a number of delta-doped wires, achieving good agreement with experiment. To motivate our transport model we have performed density-functional calculations for a variety of delta-doped wires, each with different donor configurations. These calculations also allow us to accurately define the electronic extent of a delta-doped wire, which we find to be at least 4.6 nm.
Keywords
Cite
@article{arxiv.1507.04066,
title = {Electronic transport in Si:P delta-doped wires},
author = {J. S. Smith and D. W. Drumm and A. Budi and J. A. Vaitkus and J. H. Cole and S. P. Russo},
journal= {arXiv preprint arXiv:1507.04066},
year = {2016}
}
Comments
13 pages, 11 figures