Related papers: Raman scattering in osmium under pressure
In this study, we performed comprehensive investigations on the Raman active phonon modes in cubic bixbyite In$_2$O$_3$, an important oxide based, wide-bandgap semiconductor. Fundamental insights into the lattice dynamics are revealed, by…
The temperature dependence of the mobility in suspended graphene samples is investigated. In clean samples, flexural phonons become the leading scattering mechanism at temperature $T \gtrsim 10\,\,$K, and the resistivity increases…
Semiconductor materials are the foundation of modern electronics, and their functionality is dictated by the interactions between fundamental excitations occurring on (sub-)picosecond timescales. Using time-resolved Raman spectroscopy and…
The photoluminescence spectra of band-edge transitions in GaN is studied as a function of temperature. The parameters that describe the temperature dependence red-shift of the band-edge transition energy and the broadening of emission line…
Raman spectra of few-layer WS2 have been measured with up to seven excitation energies, and peculiar resonance effects are observed. The two-phonon acoustic phonon scattering signal close to the main E2g1 peak is stronger than the main…
The measured frequencies and intensities of different first- and second- order Raman peaks of suspended graphene are used to show that optical phonons and different acoustic phonon polarizations are driven out of local equilibrium inside a…
Pb(Mg$_{1/3}$Nb$_{2/3}$)O$_{3}$ is one of the simplest representatives of the class of lead relaxors and often serves as a model system for more complicated compounds. In this paper we analyse both polarized and depolarized Raman scattering…
Shot noise is a powerful tool to probe correlations and microscopic transport details that conductance measurements alone cannot reveal. Even in atomic-scale Au devices that are well described by Landauer-B{\"u}ttiker physics, complications…
The isospin-phonon coupling in Sr2IrO4 is investigated by temperature dependent phonon Raman scattering. Anomalous behavior in the frequency of all studied optical phonons is observed below the magnetic transition temperature TN ~240 K. The…
Isotopic substitution of boron and carbon is applied for the identification of the vibrational modes of heavily boron-doped diamond synthesized by high-pressure high-temperature technique. None of the bands in the Raman spectra are shifting…
We have studied the spin-Peierls (SP) transition in alpha'-Na_{1-delta}V_2O_5 (delta = 0, 0.01 and 0.1) by means of Raman scattering. At room temperature, we observe six A_1 and three A_2 phonon modes and a broad Raman band. Below…
In the ac polarized Raman spectra of NaV2O5 we have found anomalous phonon broadening, and an energy shift of the low-frequency mode as a function of the temperature. These effects are related to the breaking of translational symmetry,…
The quadruple Calcium manganite (CaMn7O12) is a multiferroic material that exhibits a giant magnetically-induced ferroelectric polarization which makes it very interesting for magnetoelectric applications. Here, we report the Raman…
We have measured the thermoelectric power of charge density wave system $o$-TaS$_{3}$ in a wide temperature range between 10 K and 300 K. All features characteristic for charge density wave systems have been observed; strong increase below…
"Pumping" of phonons by a dynamic magnetization promises to extend the range and functionality of magnonic devices. We explore the impact of phonon pumping on room-temperature ferromagnetic resonance (FMR) spectra of bilayers of thin…
We have measured the room-temperature phonon spectrum of Mo-stabilized $\gamma-$U. The dispersion curves show unusual softening near the H point, q=[1/2,1/2,1/2], which may derive from the metastability of the $\gamma-$U phase or from…
The detailed temperature dependence of the infrared-active mode in Fe$_{1.03}$Te ($T_N\simeq 68$ K) and Fe$_{1.13}$Te ($T_N\simeq 56$ K) has been examined, and the position, width, strength, and asymmetry parameter determined using an…
Advancement in quantum information and quantum technologies has ushered in a new era of technological revolution in large scale atomistic simulation and efficient system on a chip device fabrication. This has led to innovative ways of…
We report on the temperature dependent electron transport in graphene at different carrier densities $n$. Employing an electrolytic gate, we demonstrate that $n$ can be adjusted up to 4$\times10^{14}$cm$^{-2}$ for both electrons and holes.…
We study squeezed states of phonons, which allow a reduction in the quantum fluctuations of the atomic displacements to below the zero-point quantum noise level of coherent phonon states. We investigate the generation of squeezed phonon…