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We report the first experimental demonstration of room-temperature spin transport in n-type Ge epilayers grown on a Si(001) substrate. By utilizing spin pumping under ferromagnetic resonance, which inherently endows a spin battery function…

Materials Science · Physics 2015-05-20 Sergey Dushenko , Mariko Koike , Yuichiro Ando , Teruya Shinjo , Maksym Myronov , Masashi Shiraishi

Defects in crystals are leading candidates for photon-based quantum technologies, but progress in developing practical devices critically depends on improving defect optical and spin properties. Motivated by this need, we study a new defect…

The coherent spin dynamics of electrons and holes are studied in a FA0.9Cs0.1PbI2.8Br0.2 perovskite bulk crystal, using time-resolved Kerr ellipticity in a two-color pump-probe scheme. The probe photon energy is tuned to the exciton…

We measure the ensemble transverse relaxation time (T2*) and spin-echo coherence time (T2) of the proton spin of HD molecules trapped in solid parahydrogen. By using high-purity parahydrogen matrices, we are able to measure significantly…

Quantum Physics · Physics 2026-04-21 Alexandar P. Rollings , Jonathan D. Weinstein

The time evolution of a spin-1/2 particle under the influence of a locally applied external magnetic field, and interacting with anisotropic spin environment in thermal equilibrium at temperature $T$ is studied. The exact analytical form of…

Quantum Physics · Physics 2011-10-19 Y. Hamdouni , F. Petruccione

We have mapped from the quantum to the classical limit the spin excitation spectrum of the antiferromagnetic spin-1 Heisenberg chain system CsNiCl3 in its paramagnetic phase from T=5 to 200K. Neutron scattering shows that the excitations…

Strongly Correlated Electrons · Physics 2009-11-07 M. Kenzelmann , R. A. Cowley , W. J. L. Buyers , R. Coldea , M. Enderle , D. F. McMorrow

Pulsed electrically-detected magnetic resonance of phosphorous (31P) in bulk crystalline silicon at very high magnetic fields (B > 8.5 T) and low temperatures (T = 2.8 K) is presented. We find that the spin-dependent capture and reemission…

Quantum Physics · Physics 2009-09-25 G. W. Morley , D. R. McCamey , H. A. Seipel , L. -C. Brunel , J. van Tol , C. Boehme

Coherent electron spin dynamics in 10-nm-wide InGaAs/InAlAs quantum wells is studied from 10 K to room temperature using time-resolved Kerr rotation. The spin lifetime exceeds 1 ns at 10 K and decreases with temperature. By varying the…

Mesoscale and Nanoscale Physics · Physics 2016-11-03 T. Henn , L. Czornomaz , G. Salis

We have measured temperature ($T$)- and power-dependent electron spin resonance in bulk single-wall carbon nanotubes to determine both the spin-lattice and spin-spin relaxation times, $T_1$ and $T_2$. We observe that $T_1^{-1}$ increases…

Mesoscale and Nanoscale Physics · Physics 2013-07-18 W. D. Rice , R. T. Weber , P. Nikolaev , S. Arepalli , V. Burka , A. -L. Tsai , J. Kono

We demonstrate electrical detection of the $^{14}$N nuclear spin coherence of NV centers at room temperature. Nuclear spins are candidates for quantum memories in quantum-information devices and quantum sensors, and hence the electrical…

We present experimental results and macrospin simulations of the switching characteristics of orthogonal spin-transfer devices incorporating an out-of-plane magnetized polarizing layer and an in-plane magnetized spin valve device at…

Mesoscale and Nanoscale Physics · Physics 2017-11-30 Graham E. Rowlands , Colm A. Ryan , Li Ye , Laura Rehm , Daniele Pinna , Andrew D. Kent , Thomas A. Ohki

An experimental demonstration of electrical detection of coherent spin motion of weakly coupled, localized electron spins in thin Fullerene C60 films at room temperature is presented. Pulsed electrically detected magnetic resonance…

Other Condensed Matter · Physics 2009-11-13 W. Harneit , C. Boehme , S. Schaefer , K. Huebener , K. Fostiropoulos , K. Lips

A theory for longitudinal (T1) and transverse (T2) electron spin coherence times in zincblende semiconductor quantum wells is developed based on a non-perturbative nanostructure model solved in a fourteen-band restricted basis set.…

Materials Science · Physics 2009-10-31 Wayne H. Lau , J. T. Olesberg , Michael E. Flatte'

We have measured the electron spin relaxation rate and the integrated spin noise power in n-doped GaAs for temperatures between 4 K and 80 K and for doping concentrations ranging from 2.7 x 10^{-15} cm^{-3} to 8.8 x 10^{-16} cm^{-3} using…

Mesoscale and Nanoscale Physics · Physics 2013-05-29 M. Römer , H. Bernien , G. Müller , D. Schuh , J. Hübner , M. Oestreich

Structural properties, impedance, dielectric and electric modulus spectra have been used to investigate the sintering temperature (Ts) effect on the single phase cubic spinel Ni0.6Zn0.4Fe2O4 (NZFO) ceramics synthesized by standard ceramic…

Materials Science · Physics 2016-10-19 M. A. Ali , M. N. I. Khan , F. -U. -Z. Chowdhury , S. Akhter , M. M. Uddin

Spin fluctuations in the triangular-lattice Heisenberg antiferromagnet NaCrO$_2$ are investigated by means of quasi-elastic neutron scattering with high energy resolution and wide energy band. Two components with the following features are…

Strongly Correlated Electrons · Physics 2022-08-17 K. Tomiyasu , Y. P. Mizuta , M. Matsuura , K. Aoyama , H. Kawamura

We present a joint experimental and theoretical study of spin coherence properties of 39K, 85Rb, 87Rb, and 133Cs atoms trapped in a solid parahydrogen matrix. We use optical pumping to prepare the spin states of the implanted atoms and…

We study the temporal stability of stripe-type spin order in a layered nickelate with X-ray photon correlation spectroscopy and observe fluctuations on time scales of tens of minutes over a wide temperature range. These fluctuations show an…

We use all-electrical methods to inject, transport, and detect spin-polarized electrons vertically through a 350-micron-thick undoped single-crystal silicon wafer. Spin precession measurements in a perpendicular magnetic field at different…

Materials Science · Physics 2009-11-13 Biqin Huang , Douwe J. Monsma , Ian Appelbaum

Erbium implanted silicon as a quantum technology platform has both telecommunications and integrated circuit processing compatibility. In Si implanted with Er to a concentration of 3x10^17 cm^3 and O to a concentration of 10^20 cm^3, the…