Related papers: Analysis and Geometric Optimization of Single Elec…

Radio-frequency (rf)- operated single-electron transistors (SETs) are high-sensitivity, fast-response electrometers, which are valuable for developing new insights into single-charge dynamics. We investigate high-frequency (up to 1 MHz)…

Rapid single shot spin readout is a key ingredient for fault tolerant quantum computing with spin qubits. An RF-SET (radio-frequency single electron transistor) is predominantly used as its the readout timescale is far shorter than the spin…

We calculate the full frequency spectral density of voltage fluctuations in a Single Electron Transistor (SET), used as an electrometer biased above the Coulomb threshold so that the current through the SET is carried by sequential tunnel…

Single-electron transistors have been proposed to be used as a read-out device for Cooper pair charge qubits. Here we show that a coupled superconducting transistor at a threshold voltage is much more effective in measuring the state of a…

Charge-based qubits have been proposed as fundamental elements for quantum computers. One commonly proposed readout device is the single-electron transistor (SET). SETs can distinguish between localized charge states, but lack the…

Determination of qubit initialisation and measurement fidelity is important for the overall performance of a quantum computer. However, the method by which it is calculated in semiconductor qubits varies between experiments. In this paper…

The quantum conductance of the single-electron tunneling (SET) transistor is investigated in this paper by the functional integral approach. The formalism is valid for arbitrary tunnel resistance of the junctions forming the SET transistor…

We study a single electron transistor (SET) based upon a II-VI semiconductor quantum dot doped with a single Mn ion. We present evidence that this system behaves like a quantum nanomagnet whose total spin and magnetic anisotropy depend…

We present an automated protocol for tuning single-electron transistors (SETs) and single-hole transistors (SHTs) to operate as high-sensitivity DC charge sensors. The protocol initializes a previously unmeasured device after cooldown,…

Measuring single-electron charge is one of the most fundamental quantum technologies. Charge sensing, which is an ingredient for the measurement of single spins or single photons, has been already developed for semiconductor gate-defined…

In a recent Letter by the authors [I.S. Burmistrov and A.M.M. Pruisken, Phys. Rev. Lett. 101, 056801 (2008)] it was shown that single-electron devices (single electron transistor or SET) display "macroscopic charge quantization" which is…

A single-electron transistor (SET) can be used as an extremely sensitive charge detector. Mechanical displacements can be converted into charge, and hence, SETs can become sensitive detectors of mechanical oscillations. For studying…

We report electronic transport on n-type silicon Single Electron Transistors (SETs) fabricated in Complementary Metal Oxide Semiconductor (CMOS) technology. The n-MOSSETs are built within a pre-industrial Fully Depleted Silicon On Insulator…

We report on low-temperature electronic transport measurements of a silicon metal-oxide-semiconductor quantum dot, with independent gate control of electron densities in the leads and the quantum dot island. This architecture allows the dot…

We solve the master equations of two charged qubits measured by a single-electron transistor (SET) consisted of two islands. We show that in the sequential tunneling regime the SET current can be used for reading out results of quantum…

A major difficulty in realizing a solid-state quantum computer is the reliable measurement of the states of the quantum registers. In this paper, we propose an efficient readout scheme making use of the resonant tunneling of a ballistic…

We present a method for measuring single spins embedded in a solid by probing two electron systems with a single electron transistor (SET). Restrictions imposed by the Pauli Principle on allowed two electron states mean that the spin state…

Low dimensional nano-systems are promising candidates for manipulating, controlling and capturing photons with large sensitivities and low-noise. If quantum engineered to tailor the energy of the localized electrons across the desired…

We consider charge-qubit monitoring (continuous-in-time weak measurement) by a single-electron transistor (SET) operating in the sequential-tunneling regime. We show that commonly used master equations for this regime are not of the…

Single-electron occupation is an essential component to measurement and manipulation of spin in quantum dots, capabilities that are important for quantum information processing. Si/SiGe is of interest for semiconductor spin qubits, but…