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Gate-defined semiconductor quantum dots require an appropriate number of electrons to function as qubits. The number of electrons is usually tuned by analyzing charge stability diagrams, in which charge transitions manifest as edges.…
Tomography of single-particle-resolved detectors is of primary importance for characterizing particle correlations with applications in quantum metrology, quantum simulation and quantum computing. However, it is a non-trivial task in…
A dual mode device behaving either as a field-effect transistor or a single electron transistor (SET) has been fabricated using silicon-on-insulator metal oxide semiconductor technology. Depending on the back gate polarisation, an electron…
The next generation of ultra-low-noise cryogenic detectors for space science applications require continued exploration of materials characteristics at low temperatures. The low noise and good energy sensitivity of current Transition Edge…
We demonstrate single-charge occupation of ambipolar quantum dots in silicon via charge sensing. We have fabricated ambipolar quantum dot (QD) devices in a silicon metal-oxide-semiconductor heterostructure comprising a single-electron…
We outline a scheme to accomplish measurements of a solid state double well system (DWS) with both one and two electrons in non-localised bases. We show that, for a single particle, measuring the local charge distribution at the midpoint of…
We have developed an etching process to fabricate a quantum dot and a nearby single electron transistor as a charge detector in a single layer graphene. The high charge sensitivity of the detector is used to probe Coulomb diamonds as well…
We report the multi-scale modeling and design of a gate-defined single-electron transistor in a MoS$_{2}$ bilayer. By combining density-functional theory and finite-element analysis, we design a surface gate structure to electrostatically…
We present a new way of continuously reading-out the state of a single electronic spin. Our detection scheme is based on an exchange interaction between the electronic spin and a nearby read-out quantum dot. The coupling between the two…
A split gate technique is used to form a lateral quantum dot in a two-dimensional electron gas of a modulation-doped silicon/silicon-germanium heterostructure. e-beam lithography was employed to produce split gates. By applying negative…
Physical implementations of quantum information processing devices are generally not unique, and we are faced with the problem of choosing the best implementation. Here, we consider the sensitivity of quantum devices to variations in their…
In gate-defined quantum dot systems, the conductance change of electrostatically coupled sensor dots allows the observation of the quantum dots' charge and spin states. Therefore, the sensor dot must be optimally sensitive to changes in its…
The field of superconducting quantum computing, based on Josephson junctions, has recently seen remarkable strides in scaling the number of logical qubits. In particular, the fidelities of one- and two-qubit gates are close to the breakeven…
The ability to transport single electrons on a quantum dot array dramatically increases the freedom in designing quantum computation schemes that can be implemented on solid-state devices. So far, however, routing schemes to precisely…
Zero-frequency spectral densities of current noise, charge noise, and their cross-correlation are calculated for the SET transistor in the co-tunneling regime. The current noise has a form expected for the uncorrelated co-tunneling events.…
As semiconductor device dimensions are reduced to the nanometer scale, effects of high defect density surfaces on the transport properties become important to the extent that the metallic character that prevails in large and highly doped…
Quantum devices formed in high-electron-mobility semiconductor heterostructures provide a route through which quantum mechanical effects can be exploited on length scales accessible to lithography and integrated electronics. The…
We probe local charge fluctuations in a semiconductor via laser spectroscopy on a nearby self-assembled quantum dot. We demonstrate that the quantum dot is sensitive to changes in the local environment at the single charge level. By…
Increasing the separation between semiconductor quantum dots offers scaling advantages by fa- cilitating gate routing and the integration of sensors and charge reservoirs. Elongated quantum dots have been utilized for this purpose in GaAs…
We have investigated the effects of quantum fluctuations of quasiparticles on the operation of superconducting radio-frequency single-electron transistors (RF-SETs) for large values of the quasiparticle cotunneling parameter…