Related papers: Magnetic tunnel junctions with impurities
In ordinary metals, antiferromagnetic exchange between conduction electrons and a magnetic impurity leads to screening of the impurity spin below the Kondo temperature, $T_K$. In systems such as semimetals, small-gap semiconductors and…
The impurity spectral function is studied in coupled double quantum wires at finite temperatures. Simple anisotropy in the confinement direction of the wires leads to finite non-diagonal elements of the impurity spectral function matrix.…
We report on our theoretical study of the inverse TMR effect in the spin polarized transport through a narrow channel. In the weak tunneling limit, we find the ordinary positive TMR. The TMR changes its sign as the transmission probability…
In this work, we calculate with ab initio methods the current-voltage characteristics for ideal single- and double-barrier Fe/MgO (001) magnetic tunnel junctions. The current is calculated in the phase-coherent limit by using the recently…
The electronic structure and spin-dependent tunneling in epitaxial Fe/MgO/Fe(001) tunnel junctions are studied using first-principles calculations. For small MgO barrier thickness the minority-spin resonant bands at the two interfaces make…
Altermagnets can replace ferromagnets in tunnel junctions, yielding large tunneling magnetoresistance, ultrafast switching, and low-power functionality. While most studies explore the linear-response regime, interesting features emerge at…
Though the Fermi surface of surface states of a 3D topological insulator (TI) has zero magnetization, an arbitrary segment of the full Fermi surface has a unique magnetic moment consistent with the type of spin-momentum locking in hand. We…
We theoretically investigate the angular and spin dependent transport in normal-metal/helical-multiferroic/ferromagnetic heterojunctions. We find a tunneling anisotropic magnetoresistance (TAMR) effect due to the spiral magnetic order in…
In this work the influence of the electric and magnetic fields over a tunneling particle in a rectangular potential barrier is shown, we have taken into account the presence of an impurity at the barrier center and the effects of a…
The current-voltage ($IV$) characteristics beyond the linear response regime of magnetic tunnel junction (MTJ) is systematically investigated. We find a clear negative correlation between the two coefficients to characterize the linear…
Antiferromagnetic (AF) spintronics is merit on ultra-high operator speed and stability in the presence of magnetic field. To fully use the merit, the device should be pure rather than hybrid with ferromagnet or ferrimagnet. For the…
Group-IV-based ferromagnetic semiconductor Ge1-xFex (GeFe) is one of the most promising materials for efficient spin injectors and detectors for Si and Ge. Recent first principles calculations (Sakamoto et al., Ref. 9) suggested that the…
We (re) consider in this paper the problem of tunneling through an impurity in a quantum wire with arbitrary Luttinger interaction parameter. By combining the integrable approach developed in the case of Quantum Hall edge states with the…
We theoretically study the current-induced spin torque in antiferromagnetic tunnel junctions, composed of two semi-infinite antiferromagnetic layers separated by a tunnel barrier, in both clean and disordered regimes. We find that the…
We present ab initio calculations of the evolution of anisotropic magnetoresistance (AMR) in Ni nanocontacts from the ballistic to the tunnel regime. We find an extraordinary enhancement of AMR, compared to bulk, in two scenarios. In…
We report on tunnelling magnetoresistance (TMR), current-voltage (IV) characteristics and low frequency noise in epitaxially grown Fe(110)/MgO(111)/Fe(110) magnetic tunnel junctions (MTJs) with dimensions from 2x2 to 20x20 um2. The…
The dynamics of a single impurity interacting with a many particle background is one of the central problems of condensed matter physics. Recent progress in ultracold atom experiments makes it possible to control this dynamics by coupling…
We present a numerical analysis of spin-$\frac{1}{2}$ fermions in a one-dimensional harmonic potential in the presence of a magnetic point-like impurity at the center of the trap. The model represents a few-body analogue of a magnetic…
Temperature dependence of the tunnel magnetoresistance (TMR) was calculated in range of the quantum-ballistic model in the magnetic tunnel junctions (MTJs) with embedded nanoparticles (NPs). The electron tunnel transport through NP was…
The dc Josephson critical current of a (S/M)IS tunnel structure in a parallel magnetic field has been investigated (here S is a superconductor, S/M is the proximity coupled S and paramagnet M bilayer and I is an insulating barrier). We…