Rectangular Potential Barrier Affected by External Fields, Hydrostatic Pressure and Impurities
Abstract
In this work the influence of the electric and magnetic fields over a tunneling particle in a rectangular potential barrier is shown, we have taken into account the presence of an impurity at the barrier center and the effects of a hydrostatic pressure parallel to the barrier height considering the BenDaniel-Duke boundary conditions. Given that the particle is moving inside a GaAs-AlxGa1-xAs-GaAs heterostructures it is evident a change in the transmission coefficient due to the impurity concentration and the presence of the hydrostatic pressure. The potential due to the presence of the impurity is approximate with a second degree polynomial function that resolves the discontinuity generated by heavily modifying the transmission coefficient.
Cite
@article{arxiv.0704.3974,
title = {Rectangular Potential Barrier Affected by External Fields, Hydrostatic Pressure and Impurities},
author = {Julian A. Zuñiga and O. L. Hernandez-Rosero and S. T. Perez-Merchancano},
journal= {arXiv preprint arXiv:0704.3974},
year = {2007}
}