Related papers: Magnetic tunnel junctions with impurities
Magnetite (Fe3O4) based tunnel junctions with turret/mesa structure have been investigated for different barrier materials (SrTiO3, NdGaO3, MgO, SiO2, and Al2O(3-x)). Junctions with a Ni counter electrode and an aluminium oxide barrier…
We calculate the spectral densities for two impurities inside an elliptical quantum corral using exact diagonalization in the relevant Hilbert subspace and embedding into the rest of the system. For one impurity, the space and energy…
Tunneling electroresistance (TER) effect is the change in the electrical resistance of a ferroelectric tunnel junction (FTJ) associated with polarization reversal in the ferroelectric barrier layer. Here we predict that a FTJ with a…
Magnetic tunnel junctions (MTJs), composed of two ferromagnetic electrodes separated by a thin insulating barrier layer, are currently used in spintronic devices, such as magnetic sensors and magnetic random access memories. Recently,…
We study the physics of dilute magnetic impurities in a two-dimensional altermagnetic metal. For the single impurity case, although the spin degeneracy is broken in an altermagnetic metal, we show that the antiferromagnetic Kondo coupling…
The interplay between the electron transport in metal/ferroelectric/metal junctions with ultrathin ferroelectric barriers and the polarization state of a barrier is investigated. Using a model which takes into account screening of…
In this letter we consider a magnetic impurity in a one-dimensional spin-$1/2$ Fermi gas with infinitely strong repulsive interaction between fermions. We rigorously prove that, independent of whether the magnetic coupling between impurity…
We have studied the dependence of impurity vs. band effects in the appearance of inverse giant magnetoresistance (IGMR) in Cu/Fe superlattices whit Cr. Current in plane (CIP) and current perpendicular to the plane (CPP) geometries are…
Using first-principles quantum-transport calculations, we investigate spin-dependent electronic and transport properties of antiferromagnetic tunnel junctions (AFMTJs) that consist of (110)-oriented antiferromagnetic (AFM) metal RuO$_{2}$…
A model of a spin valve in which electron transport between the magnetized electrodes is due to multistep tunneling is analyzed. Motivated by recent experiments on organic spin valves, we assume that spin memory loss in the course of…
We present a theoretical study of the transport properties of magnetic point contacts under bias. Our calculations are based on the Keldish's non-equilibrium Green's function formalism combined with a self-consistent empirical tight-binding…
We consider a magnetic impurity which interacts by hybridization with a system of weakly correlated electrons and determine the energy of the ground state by means of an 1/N_f expansion. The correlations among the conduction electrons are…
Magnetic tunnel junctions (MTJs) with conventional bulk ferromagnets separated by a nonmagnetic insulating layer are key building blocks in spintronics for magnetic sensors and memory. A radically different approach of using atomically-thin…
We study the tunneling magneto-transport properties of the Ferromagnetic Insulator-Normal Insulator-Ferromagnetic Insulator(F$\mid$N$\mid$F) and Ferromagnetic Insulator-Barrier Insulator-Ferromagnetic Insulator (F$\mid$B$\mid$F) junctions…
We study transport through a ferromagnetic single-electron transistor. The resistance is represented as a path integral, so that systems where the tunnel resistances are smaller than the quantum resistance can be investigated. Beyond the…
We present a theoretical study of the $I-V$ tunneling characteristic between two parallel two-dimensional electron gases in a perpendicular magnetic field when both are near filling factor $\nu=1$. Finite-size calculations of the…
Ultra-thin magnetic tunnel junctions with low resistive MgO tunnel barriers are prepared to examine their stability under large current stress. The devices show magnetoresistance ratios of up to 110 % and an area resistance product of down…
Based on spin-density functional theory we calculate the electronic structure of a tunnel junction consisting of two magnetic Fe layers separated by an insulating vacuum barrier selfconsistently. For the conductance the Landauer formula is…
Spin-resolved electron symmetry filtering is a key mechanism behind giant tunneling magnetoresistance (TMR) in Fe/MgO/Fe and similar magnetic tunnel junctions (MTJs), providing room temperature functionality in modern spin electronics.…
We investigate the effect of magnetic impurities on the local quasiparticle density of states (LDOS) in iron-based superconductors. Employing the two-orbital model where 3$d$ electron and hole conduction bands are hybridizing with the…