Related papers: Magnetic tunnel junctions with impurities
Since the discovery of the quantum anomalous Hall effect in the magnetically doped topological insulators (MTI) Cr:(Bi,Sb)$_2$Te$_3$ and V:(Bi,Sb)$_2$Te$_3$, the search for the exchange coupling mechanisms underlying the onset of…
Recently, it has been shown that magnetic tunnel junctions with thin MgO tunnel barriers exhibit extraordinarily high tunneling magnetoresistance (TMR) values at room temperature1, 2. However, the physics of spin dependent tunneling through…
Systematic theoretical results for the effects of a dilute concentration of magnetic impurities on the thermodynamic and transport properties in the region around the quantum critical point of a ferromagnetic transition are obtained. In the…
The surface states of a topological insulator are described by an emergent relativistic massless Dirac equation in 2+1 dimensions. In contrast to graphene, there is an odd number of Dirac points, and the electron spin is directly coupled to…
We study how the formation of the Kondo compensation cloud influences the dynamical properties of a magnetic impurity that tunnels between two positions in a metal. The Kondo effect dynamically generates a strong tunneling…
We study the current-induced torques in asymmetric magnetic tunnel junctions containing a conventional ferromagnet and a magnetic Weyl semimetal contact. The Weyl semimetal hosts chiral bulk states and topologically protected Fermi arc…
The dc transport properties of the (S/M)I(M/S) tunnel structure - proximity coupled superconductor (S) and magnetic (M) layers separated by an insulator (I) - in a parallel magnetic field have been investigated. We choose for the M metal…
We introduce a new class of spintronics devices in which a spin-valve like effect results from strong spin-orbit coupling in a single ferromagnetic layer rather than from injection and detection of a spin-polarized current by two coupled…
We show through a perturbative and an exact calculation using Wilson's renormalization methods that in the problem of two interacting Kondo impurities, on-site potential scattering generates a quantum-tunneling between the two impurities…
In quasi-magnetic tunnel junctions (QMTJs) with a EuS spin filter tunnel barrier between Al and Co electrodes, we observed large magnetoresistance (MR). The bias dependence shows an abrupt increase of MR ratio in high bias voltage, which is…
Two infinite, two-dimensional, lattice, free fermion systems, initially in different invariant states, are allowed to communicate via two point contacts, through which direct tunneling of fermions takes place. Calculations of the local…
A superconductor with 4-fermion attraction, considered by Ma\'{c}kowiak and Tarasewicz is modified by adding to the Hamiltonian a long-range magnetic interaction $V$ between conduction fermions and localized distinguishable spin 1/2…
The field of 2D magnetic materials has paved the way for the development of spintronics and nanodevices with new functionalities. Utilizing antiferromagnetic materials, in addition to layered van der Waals (vdW) ferromagnetic materials, has…
The persistent current and charge stiffness of a one-dimensional Luttinger liquid on a ring threaded by a magnetic flux are calculated by Monte Carlo simulation. By changing the random impurity potential strength and the electron-electron…
The conductance of a tunnel point-contact in an STM-like geometry having a single defect placed below the surface is investigated theoretically. The effect of multiple electron scattering by the defect after reflections by the metal surface…
The ferromagnetic topological insulator V:(Bi,Sb)$_2$Te$_3$ has been recently reported as a quantum anomalous Hall (QAH) system. Yet the microscopic origins of the QAH effect and the ferromagnetism remain unclear. One key aspect is the…
Magnetic tunnel junctions with wide band gap semiconductor ZnTe barrier were fabricated. A very low barrier height and sizable magnetoresistance were observed in the Fe/ZnTe/Fe junctions at room temperature. The nonlinear I-V characteristic…
Emerging altermagnetic materials with vanishing net magnetizations and unique band structures have been envisioned as an ideal electrode to design antiferromagnetic tunnel junctions. Their momentum-resolved spin splitting in band structures…
A magnetic tunnel junctions composed of room temperature ferromagnetic semiconductor rutile Ti1-xCoxO2-d and ferromagnetic metal Fe0.1Co0.9 separated by AlOx barrier showed positive tunneling magnetoresistance (TMR) with a ratio of ~11 % at…
In materials with strong local Coulomb interactions, simple defects such as atomic substitutions strongly affect both macroscopic and local properties of the system. A nonmagnetic impurity, for instance, is seen to induce magnetism nearby.…