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We derive diffusion equations, which describe spin-charge coupled transport on the helical metal surface of a three-dimensional topological insulator. The main feature of these equations is a large magnitude of the spin-charge coupling,…

Mesoscale and Nanoscale Physics · Physics 2013-05-29 A. A. Burkov , D. G. Hawthorn

Organic dopants are frequently used to surface-dope inorganic semiconductors. The resulted hybrid inorganic-organic materials have a crucial role in advanced functional materials and semiconductor devices. In this article, we study charge…

Materials Science · Physics 2017-08-01 Xiaoming Wang , Keivan Esfarjani , Mona Zebarjadi

In this work, we present a performance analysis of Field Effect Transistors based on recently fabricated 100% hydrogenated graphene (the so-called graphane) and theoretically predicted semi-hydrogenated graphene (i.e. graphone). The…

Mesoscale and Nanoscale Physics · Physics 2015-05-18 Gianluca Fiori , S. Lebègue , A. Betti , P. Michetti , M. Klintenberg , O. Eriksson , Giuseppe Iannaccone

We examine the enhancement of the interfacial superconductivity between LaAlO$_{3}$ and SrTiO$_{3}$ by an effective electric field. Through the breaking of inversion symmetry at the interface, we show that a term coupling the superfluid…

Superconductivity · Physics 2015-06-03 Jason T. Haraldsen , Peter Wölfle , Alexander V. Balatsky

In one-dimensional electronic systems with strong repulsive interactions, charge excitations propagate much faster than spin excitations. Such systems therefore have an intermediate temperature range [termed the "spin-incoherent Luttinger…

Disordered Systems and Neural Networks · Physics 2017-01-11 S. A. Parameswaran , Sarang Gopalakrishnan

We investigate transport in phosphorus-doped buried-channel metal-oxide-semiconductor field-effect transistors at temperatures between 10 and 295 K. In a range of doping concentration between around 2.1 and 8.7 x 1017 cm-3, we find that a…

As a methodology for controlling the carrier transport of topological insulators (TI's), a flexible tuning in carrier number on the surface states (SS's) of three dimensional TI's by surface modifications using organic molecules is…

We present the study of using depletion charges for tailoring lateral band profiles and applying it to the promising gate-all-around field-effect transistors (GAAFET). Specifically, we introduce heavily p-type doped Si next to the channel,…

Mesoscale and Nanoscale Physics · Physics 2025-01-27 P. Xu , H. Luo

A consistent and widely accepted physical basis for interpretation of charge transport in amorphous oxide semiconductor (AOS) field-effect transistors (FETs), and more generally device physics, has been hampered by uncertainties in…

Materials Science · Physics 2026-04-28 Ananth Dodabalapur , Chankeun Yoon , Xiao Wang

Using acoustic methods we have measured nonlinear AC conductance in 2D arrays of Ge-in-Si quantum dots. The combination of experimental results and modeling of AC conductance of a dense lattice of localized states leads us to the conclusion…

Mesoscale and Nanoscale Physics · Physics 2012-03-16 I. L. Drichko , A. M. Diakonov , V. A. Malysh , I. Yu. Smirnov , E. S. Koptev , A. I. Nikiforov , N. P. Stepina , Y. M. Galperin , J. Bergli

We investigated the electrical properties of a unipolar organic device with traps that were intentionally inserted into a particular position in the device. Depending on their inserted position, the traps significantly alter the charge…

Applied Physics · Physics 2023-05-02 Donghyun Ko , Gyuhyeon Lee , Kyu-Myung Lee , Yongsup Park , Jaesang Lee

The cause of electron transfer in contact electrification is one of the most hotly debated physical problems today. In this study, the electron transfer is hypothesized to be partly driven by the surface dipole induced potential during…

Classical Physics · Physics 2026-03-13 Benjamin J. Kulbago , James Chen

An n-channel accumulation-type field effect transistor (FET) has been fabricated utilizing a KTaO3 single crystal as an active element and a sputtered amorphous Al2O3 film as a gate insulator. The device demonstrated an ON/OFF ratio of 10^4…

Strongly Correlated Electrons · Physics 2009-11-10 K. Ueno , I. H. Inoue , T. Yamada , H. Akoh , Y. Tokura , H. Takagi

Despite the widespread use of solution-processable hybrid organic-inorganic perovskites in photovoltaic and light-emitting applications, determination of their intrinsic charge transport parameters has been elusive due to the variability of…

Materials Science · Physics 2019-06-26 Xin Yu Chin , Daniele Cortecchia , Jun Yin , Annalisa Bruno , Cesare Soci

Organic electrochemical transistors offer powerful functionalities for biosensors and neuroinspired electronics, with still much to understand on the time dependent behavior of this electrochemical device. Here, we report on distributed…

We propose and theoretically analyze a novel metal-oxide-semiconductor field-effect-transistor (MOSFET) type of spin transistor (hereafter referred to as a spin MOSFET) consisting of a MOS gate structure and half-metallic-ferromagnet (HMF)…

Materials Science · Physics 2009-11-10 S. Sugahara , M. Tanaka

Computer simulation of the hopping charge transport in disordered organic materials has been carried out explicitly taking into account charge-charge interactions. This approach provides a possibility to take into account dynamic…

Disordered Systems and Neural Networks · Physics 2015-05-13 Sergey V. Novikov

The ratio between mobility and diffusion parameters is derived for a Gaussian-like density of states. This steady-state analysis is expected to be applicable to a wide range of organic materials (polymers or small molecules) as it relies on…

Statistical Mechanics · Physics 2007-05-23 Yohai Roichman , Nir Tessler

We provide a phenomenological formula which describes the low-frequency optical absorption of charge carriers in disordered systems with localization. This allows to extract, from experimental data on the optical conductivity, the relevant…

Materials Science · Physics 2015-06-19 Simone Fratini , Sergio Ciuchi , Didier Mayou

We explore the charge transport mechanism in organic semiconductors based on a model that accounts for the thermal intermolecular disorder at work in pure crystalline compounds, as well as extrinsic sources of disorder that are present in…

Materials Science · Physics 2012-12-10 S. Ciuchi , S. Fratini