Generalized Einstein relation for disordered semiconductors - implications for device performance
Statistical Mechanics
2007-05-23 v2
Abstract
The ratio between mobility and diffusion parameters is derived for a Gaussian-like density of states. This steady-state analysis is expected to be applicable to a wide range of organic materials (polymers or small molecules) as it relies on the existence of quasi-equilibrium only. Our analysis shows that there is an inherent dependence of the transport in trap-free disordered organic-materials on the charge density. The implications for the contact phenomena and exciton generation rate in light emitting diodes as well as channel-width in field-effect transistors is discussed.
Cite
@article{arxiv.cond-mat/0109432,
title = {Generalized Einstein relation for disordered semiconductors - implications for device performance},
author = {Yohai Roichman and Nir Tessler},
journal= {arXiv preprint arXiv:cond-mat/0109432},
year = {2007}
}