English

Comment on "Validity of Einstein Relation in Disordered Organic Semiconductors"

Disordered Systems and Neural Networks 2013-10-11 v4 Mesoscale and Nanoscale Physics

Abstract

Wetzelaer, Koster, and Blom [PRL 107, 066605] recently observed that the classic Einstein relation Dμ=kTq\frac{D}{\mu}=\frac{kT}{q} is still valid in disordered semiconductors in thermal(quasi)equilibrium by studying the diffusion-driven currents of single-carrier diodes. This is in contrast to the previous theoretical prediction [2] and experiment observation from Leo et.al. [3] where the Einstein relation increases with 1/T. We will discuss the reason for this discrepancy here and suggest that one-carrier diodes experiment might nor be suitable for verifying Einstein relation in organic semiconductors.

Keywords

Cite

@article{arxiv.1207.2205,
  title  = {Comment on "Validity of Einstein Relation in Disordered Organic Semiconductors"},
  author = {Ling Li and Shibing Long and Ming Liu},
  journal= {arXiv preprint arXiv:1207.2205},
  year   = {2013}
}

Comments

This paper has been withdrawn by the authors. uncomplete manuscript

R2 v1 2026-06-21T21:33:05.246Z