Related papers: Quantum steering of electron wave function in an I…
To study the influence of microwave irradiation on two-dimensional electrons, we apply a method based on capacitance measurements in GaAs quantum well samples where the gate covers a central part of the layer. We find that the capacitance…
We investigate the electronic and optical properties of InAs double quantum dots grown on GaAs (001) and laterally aligned along the [110] crystal direction. The emission spectrum has been investigated as a function of a lateral electric…
Manipulating quantum state via electrostatic gating has been intriguing for many model systems in nanoelectronics. When it comes to the question of controlling the electron spins, more specifically, the magnetism of a system, tuning with…
We study electron transport through a triple quantum dot in ring configuration at finite bias. In particular, we analyze the influence of a gate voltage that detunes one of the dots, such that one branch of the interferometer becomes…
Various mesoscopic devices exploit electrostatic side gates for their operation. In this paper, we investigate how voltage-biasing of graphene side gates modulates the electrical transport characteristics of graphene channel. We explore…
We have measured the collective excitation spectrum of interacting electrons in one-dimension. The experiment consists of controlling the energy and momentum of electrons tunneling between two clean and closely situated, parallel quantum…
We provide a theoretical framework for the electric field control of the electron spin in systems with diffusive electron motion. The approach is valid in the experimentally important case where both intrinsic and extrinsic spin-orbit…
The linear magnetoelectric effect (ME) is the phenomenon by which an electric field produces a magnetization. Its observation requires both time-reversal and space-inversion symmetries to be broken, as in multiferroics. While the ME effect…
We investigate interference effects of the backscattering current through a double-barrier structure in an interacting quantum wire attached to noninteracting leads. Depending on the interaction strength and the location of the barriers,…
By operating a one-electron quantum dot (fabricated between a multielectron dot and a one-electron reference dot) as a spectroscopic probe, we study the spin properties of a gate-controlled multielectron GaAs quantum dot at the transition…
We analyze the effect of a gate on the conductance of molecules by separately evaluating the gate-induced polarization and the potential shift of the molecule relative to the leads. The calculations use ab initio density functional theory…
Understanding the microscopic origin of the gate-controlled supercurrent (GCS) in superconducting nanobridges is crucial for engineering superconducting switches suitable for a variety of electronic applications. The origin of GCS is…
Electric gating can strongly modulate a wide variety of physical properties in semiconductors and insulators, such as significant changes of conductivity in silicon, appearance of superconductivity in SrTiO3, the paramagnet-ferromagnet…
We report conductance and supercurrent of InAs nanowires coupled to Al-superconducting electrodes with short channel lengths and good Ohmic contacts. The nanowires are suspended 15\,nm above a local gate electrode. The charge density in the…
Electrostatically Formed Nanowire (EFN) based transistors have been suggested in the past as gas sensing devices. These transistors are multiple gate transistors in which the source to drain conduction path is determined by the bias applied…
In quantum logic operations, information is carried by the wavefunction rather than the energy distribution. Therefore, the relative phase is essential. Abelian and non-Abelian phases can be emulated in classical waves using passive coupled…
The observation of the gate-controlled supercurrent (GCS) effect in superconducting nanostructures increased the hopes for realizing a superconducting equivalent of semiconductor field-effect transistors. However, recent works attribute…
The appealing feature of molecular electronics is the possibility of exploiting functionality built within a single molecule. This functionality can be employed, for example, for sensing or switching purposes. Thus, ideally, the associated…
The DC and AC conductivities of the n-GaAs/AlAs heterostructure with two filled size quantization levels are studied within a wide magnetic field range. The electron spectrum of such heterostructure is characterized by two subbands…
The magnetic stray field from Fe gates is used to modify the spin precession frequency of InGaAs/GaAs quantum-well electrons in an external magnetic field. By using an etching process to position the gates directly in the plane of the…