The magnetic stray field from Fe gates is used to modify the spin precession frequency of InGaAs/GaAs quantum-well electrons in an external magnetic field. By using an etching process to position the gates directly in the plane of the quantum well, the stray-field influence on the spin precession increases significantly compared with results from previous studies with top-gated structures. In line with numerical simulations, the stray-field-induced precession frequency increases as the gap between the ferromagnetic gates is reduced. The inhomogeneous stray field leads to additional spin dephasing.
@article{arxiv.0709.2120,
title = {Optimized stray-field-induced enhancement of the electron spin precession by buried Fe gates},
author = {L. Meier and G. Salis and N. Moll and C. Ellenberger and I. Shorubalko and U. Wahlen and K. Ensslin and E. Gini},
journal= {arXiv preprint arXiv:0709.2120},
year = {2009}
}